CdSe‐based nanostructures: growth, properties, lasers

Иванов, С. В.; Торопов, А. А.; Shubina, T. V.; Sorokin, S. V.; Kyutt, R. N.; Ситникова, A. А.; Solnyshkov, D. D.; Nekrutkina, O. V.

doi:10.1002/pssb.200304263

Cited by 6 publications

(1 citation statement)

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“…Previously [6], we performed a kinematical Monte-Carlo simulation of the CdSe QD growth initiated by deposition of ultra-thin CdTe layer in a BeTe matrix. We have shown that …”

Section: Discussionmentioning

confidence: 99%

Photoluminescence from Cd(Se,Te) quantum dots in a ZnSe matrix

Lyublinskaya

Sedova

Sorokin

et al. 2006

Phys. Status Solidi (c)

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We report on the photoluminescence (PL) and PL excitation studies of CdSe/ZnSe quantum dots (QDs) grown by molecular beam epitaxy using super-strained CdTe fractional monolayer deposition prior to the CdSe growth. We have shown that introduction of CdTe stressor initiates the formation of a dense array of Cd(Se,Te) QDs and demonstrated the co-existence of type-I and type-II structures within the dot sheet.1 Introduction Coherent CdSe/ZnSe insertions with a nominal thickness in the range of 1-3 monolayer (ML) are known to represent the sheets of CdSe-enriched islands, or quantum dots (QDs), incorporated into the body of an alloyed ZnCdSe quantum well (see, for example, [1, 2] and references therein). Previously, we reported the fabrication of inhomogeneous arrays of CdSe QDs with nanometerscaled sizes and up to 90% Cd content, using the modification of migration enhanced epitaxy (MEE) technique exploiting growth interruptions after each MEE cycle [3]. Just recently [4], we have proposed another approach to fabrication of high-quality structures, based on the stressor-controlled selforganization of Cd(Se,Te) QDs in ZnSe, using super-strained CdTe fractional monolayer (FM) deposition prior to the CdSe growth. We have demonstrated that introduction of the stressor causes the redistribution of CdSe on the growth surface and results in the formation of the dense array of QDs with increased Cd content in comparison to the standard self-organization process. In the present paper, basing on the photoluminescence (PL) and PL excitation (PLE) studies of Cd(Se,Te)/ZnSe QDs, we discuss the model of stressor-controlled QD formation and demonstrate the coexistence of type-I and type-II nanostructures within the Cd(Se,Te)/ZnSe dot sheet.The structures with either single or multiple QD sheets were grown on a GaAs (001) substrate in a molecular beam epitaxy (MBE) system supplied with both II-IV and III-V chamber [4,5]. The latter was used for the deposition of a GaAs buffer layer. Upon the buffer, 100-nm-thick ZnSSe and then 50-nmthick ZnSe layers were grown in the II-VI chamber. After that, for the growth initiation of the stressor layer, the ZnSe surface was stabilized consequently under Zn and Te fluxes to form the Te-terminated surface. A preliminarily calibrated CdTe FM was deposited in a conventional MBE mode as a stressor. Then, a 2 ML CdSe layer was formed by the modified MEE technique [3]. As a result, the actual design of the Cd(Se,Te)/ZnSe insertions is ZnSe/0.4ML-ZnTe/0.2ML-CdTe/2ML-CdSe/ZnSe. The nominal thickness of the CdSe layer as well as of ZnTe and CdTe FMs employed in the structures has been evaluated from a semi-kinematic simulation of X-ray diffraction Θ-2Θ rocking curves of three superlattices (ZnSe/CdSe, ZnSe/ZnTe and ZnSe/ZnTe/CdTe) grown using the same regimes. The formation of

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“…Previously [6], we performed a kinematical Monte-Carlo simulation of the CdSe QD growth initiated by deposition of ultra-thin CdTe layer in a BeTe matrix. We have shown that …”

Section: Discussionmentioning

confidence: 99%