CdTe Detectors

Abbene, L.

doi:10.1016/b978-0-444-53632-7.00619-5

Cited by 12 publications

(14 citation statements)

References 94 publications

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“…In particular, the energy resolutions were comparable to the corresponding characteristics of commercial Cd(Zn)Te-based X/γ-ray detectors, fabricated without a guard ring, or any rise-time discrimination technique. 1,2 Quite symmetrical profiles the prominent peaks at 59.5 keV, 122 keV, and 662 keV in the spectra of 241 Am (a) 122 Co (b), and 137 Cs (c) isotopes, respectively, evidence the full charge collection even at not very high bias voltage (Figure 4). One of negative features of the In/CdTe/Au p-n junction-diode detectors, formed by frontside laser irradiation doping without an additional vacuum annealing procedure was high sensitivity (strong dependence) of the detection efficiency (number of counts, i.e.…”

Section: Spectroscopic Characteristicsmentioning

confidence: 99%

“…For fabrication of p-n junction-diode X/γ-ray detectors, we used commercial high-resistivity (ρ ≈ 2 × 10 9 Ω•cm) p-like (111) oriented CdTe single crystals with the area of 5 × 5 mm 2 and thickness of 0.5 mm, manufactured by Acrorad Co. Ltd. by Traveling Heater Method. 1,2 Such crystals exhibit crystallographic polarity, i.e. the opposite surfaces of CdTe(111) wafers are distinguished by the crystalline structure.…”

Section: Experimental Details 21 Formation Of In/cdte/au P-n Junction...mentioning

confidence: 99%

“…The advantages of CdTe-based X/𝛾-ray detectors, designed as diode structures, have encouraged intense development of various fabrication techniques of such kind of sensors. 1,2 We have elaborated diode-type detectors based on either a p-n junction, formed by laser induced doping [3][4][5][6] or Schottky barrier, created using Ar plasma surface processing or different contact materials. [6][7][8] High parameters (energy resolution and detection efficiency) are achieved in both types of diode detectors.…”

Section: Introductionmentioning

confidence: 99%

“…[9][10][11] The detector fabrication results strongly depend on the CdTe crystal surface state prior to the formation of surface-barrier structures and contact deposition. 1,2 There is a quite simple and efficient technique to increase the characteristics and stability of detectors which consist of preliminary low-temperature annealing of CdTe crystals. 12,13 Such technique was employed in the present study.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of CdTe-based p-n junction-diode x/y-ray detectors formed by frontside laser irradiation

Gnatyuk¹,

Maslyanchuk

Kulyk

et al. 2022

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIV

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The In/CdTe/Au p-n junction-diode X/γ-ray detectors, formed by frontside laser irradiation doping, were studied using I-V characteristics, measured at different temperatures, and spectra of 241 Am, 57 Cs, and 137 Cs isotopes, obtained in a wide bias range V = 60-380 V. A key feature of the technology was low-temperature ( ~90 ºC) vacuum annealing of polished in a Br-methanol solution detector-grade (111) oriented p-like CdTe crystals prior to the deposition of an In dopant film and formation of electrodes. After laser-induced doping of a layer near the In/CdTe interface and deposition of an Au electrode (ohmic contact), the In/CdTe/Au structures showed high rectification. The I-V measurements and calculations revealed that the dominant charge transport mechanism at low reverse bias was generation-recombination in the space charge region. It was noteworthy that the reverse current linearly increased at higher V ≥ 50 V when the depletion region extended over the entire crystal thickness. A sharp increase in I at higher V, that was inherent in diode structures (I ~ V n , n > 1), was not observed that evidenced a perfect ohmic contact, i.e. no injection of minority carriers from the Au/CdTe contact occurred. The detectors formed on the preliminary annealed CdTe crystals showed high energy resolution ((FWHM = 0.99 %@662keV at V = 300 V). Furthermore, high spectroscopic characteristics (detection efficiency, energy resolution, true energy position of the 662 keV peak) were observed (with a deviation < 20 %) at V =150-400V.

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Section: Spectroscopic Characteristicsmentioning

confidence: 99%

Section: Experimental Details 21 Formation Of In/cdte/au P-n Junction...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Characterization of CdTe-based p-n junction-diode x/y-ray detectors formed by frontside laser irradiation

Gnatyuk¹,

Maslyanchuk

Kulyk

et al. 2022

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIV

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“…The band gap energy is proportional to the amount of energy of a photon released after recombination of an electron and a hole [13]. CdTe’s bandgap being in the 1.44–1.47eV range [8,54], and that of GaN being 3.4 eV [60], CdTe and GaN-based films can be operated at room temperature [60,61]. Therefore, CdTe-based dosimeters will have less temperature dependence because the room temperature’s heat energy may not excite electrons from the valence band to the conduction band; the excitation consequently results into a photocurrent.…”

Section: Photovoltaic Sensors/solar Cellsmentioning

confidence: 99%

A Review: Photonic Devices Used for Dosimetry in Medical Radiation

Damulira

Yusoff

Omar

et al. 2019

Sensors

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Numerous instruments such as ionization chambers, hand-held and pocket dosimeters of various types, film badges, thermoluminescent dosimeters (TLDs) and optically stimulated luminescence dosimeters (OSLDs) are used to measure and monitor radiation in medical applications. Of recent, photonic devices have also been adopted. This article evaluates recent research and advancements in the applications of photonic devices in medical radiation detection primarily focusing on four types; photodiodes – including light-emitting diodes (LEDs), phototransistors—including metal oxide semiconductor field effect transistors (MOSFETs), photovoltaic sensors/solar cells, and charge coupled devices/charge metal oxide semiconductors (CCD/CMOS) cameras. A comprehensive analysis of the operating principles and recent technologies of these devices is performed. Further, critical evaluation and comparison of their benefits and limitations as dosimeters is done based on the available studies. Common factors barring photonic devices from being used as radiation detectors are also discussed; with suggestions on possible solutions to overcome these barriers. Finally, the potentials of these devices and the challenges of realizing their applications as quintessential dosimeters are highlighted for future research and improvements.

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