CdTe<i>P</i>-<i>N</i>Diodes Prepared by Al Vapor-Diffusion

Gu, Jyongsil; Kitahara, Toshiyuki; Sakaguchi, Takehiro

doi:10.1143/jjap.12.1460

Cited by 6 publications

(3 citation statements)

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“…Fig. 16 benchmarks the g m •EOT product vs. L ch of In 0.53 Ga 0.47 As GAA FETs with our previous work on InGaAs MOSFETs [1][9] [11][12][13] . Despite the low indium concentration (53%), the In 0.53 Ga 0.47 As GAA MOSFETs show the highest g m •EOT product.…”

Section: 21mentioning

confidence: 88%

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First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach

Liu

et al. 2011

2011 International Electron Devices Meeting

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The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In 0.53 Ga 0.47 As channel and atomic-layer-deposited (ALD) Al 2 O 3 /WN gate stacks by a top-down approach. A wellcontrolled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (L ch ) down to 50nm. A detailed scaling metrics study (S.S., DIBL, V T ) with L ch of 50nm -110nm and fin width (W Fin ) of 30nm -50nm are carried out, showing the immunity to short channel effects with the advanced 3D structure. The GAA structure has provided a viable path towards ultimate scaling of III-V MOSFETs.

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Section: 21mentioning

confidence: 88%

“…However, the etching is found to be highly anisotropic. Therefore the InGaAs fins have to be patterned along <100> directions for a successful release process [7] . Fig.…”

Section: Methodsmentioning

confidence: 99%

First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach

Liu

et al. 2011

2011 International Electron Devices Meeting

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“…It explains that polycrystalline CdTe was well grown to have a Zincblend structure 7,8 . And it was already known that diffused Al atoms function as donor dopants 9,10 , while Au atoms are working as acceptor dopants 11 , as depicted in Fig. 2 (b)-(c).…”

Section: Resultsmentioning

confidence: 97%