CdTe–InSb heterojunctions

Rabin, Bryan; Scharager, C.; Hage‐Ali, M.; Siffert, P.; Wald, F. V.; Bell, R. O.

doi:10.1002/pssa.2210620127

Cited by 12 publications

(1 citation statement)

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“…Barrier heights (V)b)CY and ionised donor concentrations ( N d ) were obtained from the intercept and the gradient, following the conventional procedure (e.g. Sze 1976, Rhoderick 1978. A few diodes contained a high density of electron traps in the surface layer leading to large errors in the determination of V)b from the capacitance method.…”

Section: Transport Measurementsmentioning

confidence: 99%

Schottky barriers and interface reactions on chemically etched n-CdTe single crystals

Dharmadasa

McLean

Patterson

et al. 1987

Semicond. Sci. Technol.

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The electrical properties of metal-CdTe contacts have been measured for a diverse group of 1 8 metals by using current-voltage and capacitance-voltage techniques. The contacts were formed by metal evaporation onto chemically etched surfaces of n-CdTe single crystals. A large number of metals yield a barrier height of 0.72 f 0.03 V, independent of the work function of the metal. Mn, Cr and V were different, producing ohmic or very low barriers. The nature of the CdTe(1 10) surfaces produced by chemical etching using bromine in methanol was studied by an x-ray photo-emission technique. We have also carried out a detailed investigation into the microscopic interactions at selected interfaces by soft x-ray photo-emission using a synchrotron radiation source. Detailed comparisons of the microscopic interaction of Ag and Mn with the oxidised surfaces, using photo-emission are reported. In contrast to the behaviour of Ag, the Mn overlayer reduces completely the CdTe native oxide layer, leading to low-barrier contacts. It has been found that the bulk thermodynamic data provide an approximate description of the interface reactivity for most of the systems studied.

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Section: Transport Measurementsmentioning

confidence: 99%

Schottky barriers and interface reactions on chemically etched n-CdTe single crystals

Dharmadasa

McLean

Patterson

et al. 1987

Semicond. Sci. Technol.

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Influence of Growth Parameters on the Surface and Interface Quality of Laser Deposited InSb/CdTe Heterostructures

Venkataraghavan

Rao

Hegde

et al. 1997

phys. stat. sol. (a)

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The pulsed laser deposition technique has been employed for the growth of single crystalline oriented films of indium antimonide on bulk cadmium telluride substrates. The films grown during this study were tested for surface quality and interface features, generally prevalent due to film–substrate reactions. The composition of the grown film was found to deviate from that of the target owing to loss of antimony during evaporation, leading to the formation of an interfacial compound. The antimony deficiency in the films was compensated by correcting the target composition. Growth parameters and their effects on these manifestations have been studied. The optimization of these parameters has led to growth of layers with good surface morphology and abrupt interfaces. Efforts have been made to detect the origin of the diffuse interface and to identify the compound resulting at the interface through photoluminescence spectroscopy. Using PL and thermoenergetic calculations for the plausible reactions at the interface, we have ascertained that the interfacial compound is more likely to be In2Te3.

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