Centimeter-Scale Few-Layer PdS₂: Fabrication and Physical Properties

Abstract

To develop next-generation electronic devices, novel semiconductive materials are urgently required. The transition metal dichalcogenides (TMDs) hold the promise of next generation of semiconductor materials for emerging electronic applications. As a member of the group-10 TMDs, PdS2 has a notable layer-number-dependent band structure and tremendously high carrier mobility at room temperature. Here, we demonstrate the experimental realization of centimeter-scale synthesis of the few-layer PdS2 by the combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. For the first time, the optical anisotropic properties of the few-layer PdS2 were investigated through angle-resolved polarized Raman spectroscopy. Also, the evolution of Raman spectra was studied depending on the temperature in the range of 12–300 K. To further understand the electronic properties of the few-layer PdS2, the field-effect transistor (FET) devices were fabricated and investigated. The electronic measurements of such FET devices reveal that the PdS2 materials exhibit a tunable ambipolar transport mechanism with field-effect mobility of up to ∼388 cm2 V–1 s–1 and the on/off ratio of ∼800, which were not reported before in the literature. To well understand the experimental results, the electronic structure of PdS2 was determined using density functional theory (DFT) calculations. These excellent physical properties are very helpful in developing high-performance opto-electronic applications.

Topological bands in the PdSe2 pentagonal monolayer

“…13,14 Notwithstanding, there are several instances of experimentally found 2D pentamaterials, such as PdSe 2 , PdS 2 and NiN 2 . [15][16][17] Among these, the recently synthesized PdSe 2 has been the subject of intensive experimental and theoretical research. Importantly, the pentagonal phase is the stable allotrope for this material.…”

Enhanced Absorption in the Wide Wavelength Range: Black Silicon Decorated with Few-Layer PtS2

“…Meanwhile, the few-layer PtS 2 was grown on the entire black silicon surface by combining the PVD and chemical vapor deposition (CVD) methods. This method of combining CVD and PVD has also been successfully applied to the preparation of few-layer PdS 2 . The Pt-black silicon and PtS 2 -black silicon hybrid materials increase the number of “hot spots” in the gaps of the vertical array structure and reinforce the light suppression and trapping, which is directly manifested as an increase in absorption compared with that of the black silicon structure.…”

“…This method of combining CVD and PVD has also been successfully applied to the preparation of few-layer PdS 2 . 52 The Pt-black silicon and PtS 2 -black silicon hybrid materials increase the number of "hot spots" in the gaps of the vertical array structure and reinforce the light suppression and trapping, which is directly manifested as an increase in absorption compared with that of the black silicon structure. Fabrication of Pt-Black Silicon and PtS 2 -Black Silicon Hybrid Materials.…”

Large second harmonic generation in a penta-CdO2sheet exfoliated from its bulk phase

“…Techniques such as chemical vapor deposition 21 and molecular beam epitaxy 22 have also been used in the past to synthesize 2D pentagonal sheets. These include penta-PdSe 2 , penta-silicene nanoribbon synthesized via physical vapor deposition, 23 penta-PdS 2 fabricated by sulfurization of a Pd film, 24 and penta-NiN 2 synthesized using a high-pressure approach. 25…”