To develop next-generation electronic devices, novel semiconductive materials are urgently required. The transition metal dichalcogenides (TMDs) hold the promise of next generation of semiconductor materials for emerging electronic applications. As a member of the group-10 TMDs, PdS2 has a notable layer-number-dependent band structure and tremendously high carrier mobility at room temperature. Here, we demonstrate the experimental realization of centimeter-scale synthesis of the few-layer PdS2 by the combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. For the first time, the optical anisotropic properties of the few-layer PdS2 were investigated through angle-resolved polarized Raman spectroscopy. Also, the evolution of Raman spectra was studied depending on the temperature in the range of 12–300 K. To further understand the electronic properties of the few-layer PdS2, the field-effect transistor (FET) devices were fabricated and investigated. The electronic measurements of such FET devices reveal that the PdS2 materials exhibit a tunable ambipolar transport mechanism with field-effect mobility of up to ∼388 cm2 V–1 s–1 and the on/off ratio of ∼800, which were not reported before in the literature. To well understand the experimental results, the electronic structure of PdS2 was determined using density functional theory (DFT) calculations. These excellent physical properties are very helpful in developing high-performance opto-electronic applications.

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Ultrablack materials are distinguished by their extremely low reflectivity and high absorptivity, which can be used to increase photovoltaic cell efficiency, capture stray light, and design radar camouflage. Black silicon is a type of ultrablack material, the absorptivity of which still has room for improvement. Here, nanostructured black silicon is prepared by a metal-assisted chemical etching method, in which chloroauric acid (HAuCl4) acts as the catalyst. Furthermore, the study demonstrates that due to the deposition of a few layers of PtS2 the number of “hot spots” between the sidewall gaps of bamboo shoot-like protrusions is significantly increased, thereby further improving the absorption of black silicon and enhancing light suppression. The few-layer PtS2 was densely grown on the black silicon by combining the physical vapor deposition (PVD) and the chemical vapor deposition (CVD) methods. Next, the enhanced Raman property of black silicon was explored. These results provide a new idea for the manufacture of excellent photovoltaic and optoelectronic devices in which very high absorption is necessary.

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