Large-area uniform few-layer PtS2: Synthesis, structure and physical properties

Lu, Joan; Zhang, X.; Su, Guowen; Yang, Wenke; Han, Kai; Yu, Xiaohua; Wan, Yanfen; Wang, Xiaoguang; Yang, Peng

doi:10.1016/j.mtphys.2021.100376

Cited by 31 publications

(17 citation statements)

References 59 publications

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“…Nevertheless, the member of the group 10 TMDs, such as bulk PtS 2 prepared by the CVT method, shows a stronger interlayer coupling with much smaller absolute χ values of −0.00275 and −0.00368 cm –1 K –1 for A 1g 2 and E g 1 modes, respectively. For a few-layered PtS 2 prepared by the PVD-CVD method, only the A 1g 1 mode was observed with a value of 0.0087 cm –1 K –1 for χ . In this work, for few-layered PdS 2 , the χ values of A g and E g modes are 0.0044 and 0.0089 cm –1 K –1 , respectively.…”

Section: Results and Discussionmentioning

confidence: 51%

“…For a fewlayered PtS 2 prepared by the PVD-CVD method, only the A 1g 1 mode was observed with a value of 0.0087 cm −1 K −1 for χ. 54 In this work, for few-layered PdS 2 , the χ values of A g and E g modes are 0.0044 and 0.0089 cm −1 K −1 , respectively. One can see that the PdS 2 material prepared by the PVD-CVD method has a weaker interlayer coupling and a stronger electron-E g coupling compared to its counterpart PtS 2 prepared by the CVT method.…”

Section: T H Imentioning

confidence: 57%

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Centimeter-Scale Few-Layer PdS₂: Fabrication and Physical Properties

Zhang

et al. 2021

ACS Appl. Mater. Interfaces

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To develop next-generation electronic devices, novel semiconductive materials are urgently required. The transition metal dichalcogenides (TMDs) hold the promise of next generation of semiconductor materials for emerging electronic applications. As a member of the group-10 TMDs, PdS2 has a notable layer-number-dependent band structure and tremendously high carrier mobility at room temperature. Here, we demonstrate the experimental realization of centimeter-scale synthesis of the few-layer PdS2 by the combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. For the first time, the optical anisotropic properties of the few-layer PdS2 were investigated through angle-resolved polarized Raman spectroscopy. Also, the evolution of Raman spectra was studied depending on the temperature in the range of 12–300 K. To further understand the electronic properties of the few-layer PdS2, the field-effect transistor (FET) devices were fabricated and investigated. The electronic measurements of such FET devices reveal that the PdS2 materials exhibit a tunable ambipolar transport mechanism with field-effect mobility of up to ∼388 cm2 V–1 s–1 and the on/off ratio of ∼800, which were not reported before in the literature. To well understand the experimental results, the electronic structure of PdS2 was determined using density functional theory (DFT) calculations. These excellent physical properties are very helpful in developing high-performance opto-electronic applications.

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Section: Results and Discussionmentioning

confidence: 51%

Section: T H Imentioning

confidence: 57%

Centimeter-Scale Few-Layer PdS₂: Fabrication and Physical Properties

Zhang

et al. 2021

ACS Appl. Mater. Interfaces

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“…The bias voltage was set to 709 V, and bias cleaning was performed on the cavity for 5 min. The Ar gas flow was controlled to make the cavity pressure reach 0.5 Pa. Pt target power was set to 20 W, the substrate rotation speed was set to 20 rpm, and the sputtering time was 30 s. Under this parameter, the thickness of the Pt after sputtering was about 4 nm, and the PtS 2 -black silicon hybrid materials were obtained by the CVD process reported in literature . The black silicon substrate with Pt is placed parallel downward on a quartz boat containing sulfur powder (1.0 g, 99.95%, Aladdin Industrial Co. Ltd.), and the unit is then enclosed in a single open fine-quartz tube.…”

Section: Methodsmentioning

confidence: 99%

Enhanced Absorption in the Wide Wavelength Range: Black Silicon Decorated with Few-Layer PtS₂

Zhuang

Yang

et al. 2021

J. Phys. Chem. C

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Ultrablack materials are distinguished by their extremely low reflectivity and high absorptivity, which can be used to increase photovoltaic cell efficiency, capture stray light, and design radar camouflage. Black silicon is a type of ultrablack material, the absorptivity of which still has room for improvement. Here, nanostructured black silicon is prepared by a metal-assisted chemical etching method, in which chloroauric acid (HAuCl4) acts as the catalyst. Furthermore, the study demonstrates that due to the deposition of a few layers of PtS2 the number of “hot spots” between the sidewall gaps of bamboo shoot-like protrusions is significantly increased, thereby further improving the absorption of black silicon and enhancing light suppression. The few-layer PtS2 was densely grown on the black silicon by combining the physical vapor deposition (PVD) and the chemical vapor deposition (CVD) methods. Next, the enhanced Raman property of black silicon was explored. These results provide a new idea for the manufacture of excellent photovoltaic and optoelectronic devices in which very high absorption is necessary.

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“…By the tuning of S partial pressure during the annealing, one can convert the PtS into PtS 2 . 24,25,47 Our calculation results may provide a general guide for selecting proper parameter windows to synthesize the stoichiometric or defective transition metal dichalcogenides, e.g., PtS 2 , MoS 2 or PdS 2 . For example, one could obtain stoichiometric MS 2 -rich film (here M denotes metal) by the regulation of pressure and temperature, i.e., increasing the partial pressure of sulfur and decreasing the reaction temperature.…”

Section: Materials Advances Accepted Manuscriptmentioning

confidence: 99%