Ceramic thin films deposited on Si(100) by laser ablation: Application as buffer layers for YBa₂Cu₃O₇ films

Abstract

Ceramic thin films of yttria‐stabilised zirconia (YSZ), SrTiO3(STO) and CeO2 have been deposited on Si(100) substrates by laser ablation. The films have been characterized by X‐ray diffractometry, field emission scanning electron microscopy and secondary ion mass spectrometry (SIMS). The effects of the oxygen partial pressure during deposition and the substrate temperature were studied. All the films have preferential orientation: (h00) and (hh0) for STO and (hhh) for CeO2 and YSZ. The films show a low density of particulates and a very smooth surface. SIMS profiles indicate a low interdiffusion between film and silicon. One of the applications of these materials is their use as a buffer layer for the growth of YBCO on silicon. Because both materials are highly reactive, it is necessary to put a barrier between YBCO and silicon. For this purpose we used the ceramic films previously deposited in order to obtain superconducting YBCO films. The deposited YBCO films present good superconducting properties with zero resistance at temperatures between 80 and 85 K.

Cerium dioxide buffer layers at low temperature by atomic layer deposition

“…27 For CeO 2 films grown by laser ablation the (111) reflection has been reported to be the strongest one. 17 Atomic force microscopy (AFM) was used to study the morphology of the CeO 2 films deposited on Si(100). The films were smooth and uniform regardless of the precursor used (Fig.…”

“…12 Cerium dioxide thin films have been deposited by many different techniques. Physical methods include electron beam evaporation (EBE), 13 sputtering, 14 laser ablation [15][16][17] and molecular beam epitaxy (MBE). 18 Several chemical methods have been applied as well, among them sol-gel techniques, 19 catalyst-enhanced chemical vapour deposition (CECVD), 20 metalorganic CVD (MOCVD), [21][22][23][24] aerosol-assisted CVD, 25 plasma-enhanced CVD (PECVD) 26 and atomic layer deposition (ALD).…”