CF4 plasma etching on LiNbO3

Lee, C. L.; Lu, Chih-Yuan

doi:10.1063/1.90959

Cited by 33 publications

(5 citation statements)

References 7 publications

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“…RIE is in itself a highly controllable and versatile dry process involving both physical and chemical effects to achieve directive and anisotropic material removal. It has already been demonstrated that lithium niobate can be dry etched using fluorine-based chemistries, [14][15][16][17] and ICP-RIE has previously been used on X-or Z-axis crystallographic orientations of lithium niobate to successfully fabricate ridge waveguides or photonic crystals, usually after proton exchange [18][19][20] but there is no report of any specific process allowing to dry etch structures that are several microns in depth in lithium niobate. The fabrication of very deep or very high aspect ratio structures is actually seriously impaired by the formation of lithium fluoride ͑LiF͒ compounds during the etching process that are relatively nonvolatile, leading to redeposition phenomena impeding the material removal.…”

Section: Introductionmentioning

confidence: 98%

Highly selective electroplated nickel mask for lithium niobate dry etching

Benchabane

Robert

Rauch

et al. 2009

Journal of Applied Physics

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International audienceA sulfur hexafluoride based reactive ion etching process allowing to etch several micron deep holes with diameters of the order of a few microns in lithium niobate is reported. Etching of deep structures with aspect ratios up to 1.5 was made possible through the use of an electroplated nickel mask exhibiting a selectivity as high as 20 with respect to lithium niobate. Several crystallographic orientations were investigated, although particular interest was paid to Y-axis oriented substrates. Photoresist as well as metal masks were also tested and their selectivity was compared. The influence of process parameters such as applied rf power or operating pressure on the sidewall slope angle of the etched patterns was investigated. The technique has been successfully applied to the fabrication of phononic crystals consisting of periodical arrays of 9 µm diameter, 10 µm deep holes, with a 10 µm period, and presenting sidewall angles as high as 73° etched in Y-axis oriented lithium niobate

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Section: Introductionmentioning

confidence: 98%

Highly selective electroplated nickel mask for lithium niobate dry etching

Benchabane

Robert

Rauch

et al. 2009

Journal of Applied Physics

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“…RIE is in itself a highly controllable and versatile dry process involving both physical and chemical effects to achieve directive and anisotropic material removal. It has already been demonstrated that LiNb0 3 can be dry etched using fluorin-based chemistries [6]- [12] although most of the reported works are dedicated to optical cuts (namely X-and Z-cuts). There is however no report of any specific process allowing to dry etch structures that are several microns in depth in lithium niobate.…”

Section: Introductionmentioning

confidence: 99%

Lithium niobate surface structuration for phononic crystal fabrication

Benchabane

Robert

Ulliac

et al. 2008

2008 IEEE Ultrasonics Symposium

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Reactive Ion Etching (RIE) has been used to etch micron-sized holes which are several microns in depth in lithium niobate, mostly on Y-and V-rotated cut substrates, the underlying idea being the realization of phononic crystal devices. The etching process is based on the use of sulfur hexafluoride as the etching gas. Photoresist and sputtered or electroplated metals masks were used and compared to ensure high process selectivity and good sidewall verticality. Maximum mask selectivity was found to be of the order of 20. Etched depths larger than 10 J-tm and aspect ratios above 1.5 have been achieved. Sidewall verticality higher than 73°is also reported. The technique has been applied to the fabrication of phononic SAW devices designed to operate at a frequency around 200 MHz. The phononic structure consists of periodical arrays of 9 /--lm diameter, with a 10 J-tm period etched in V-cut lithium niobate.

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“…Similar ideas have been developed by many authors in terms of fuzzy DM, BEC DM, wave DM or ultra-light axions [8,[20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36]. These models of dark mater (Scalar field dark matter: SFDM hereafter) have been shown to be able to explain the observed rotation curves [22,[37][38][39][40][41], the large scale structures of the universe [9], the minimum mass and the size of galaxies [42,43], the cosmic background radiation, spiral arms [44] and more. Works have also been done on the stability of BEC halos [45].…”

Section: Introductionmentioning

confidence: 99%

Quantum Entanglement of Dark Matter

Lee

2018

J. Korean Phys. Soc.

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We suggest that the dark matter in the universe has quantum entanglement if the dark matter is a Bose-Einstein condensation of ultra-light scalar particles. In this theory, any two regions of a galaxy are quantum entangled due to the quantum nature of the condensate. We calculate the entanglement entropy of a typical galactic halo, which turns out to be at least O(ln(M/m)), where M is the mass of the halo and m is the mass of a dark matter particle. The entanglement can be inferred from the rotation curves of the galaxy or the interference patterns of the dark matter density.

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CF4 plasma etching on LiNbO3

Abstract: Deep anisotropic LiNbO3 etching with SF6/Ar inductively coupled plasmas J. Vac. Sci. Technol. B 30, 011208 (2012); 10.1116/1.3674282 40-50MHz lithium niobate (LiNbO3) transducers for pulsed Doppler measurements in mouse embryos

Cited by 33 publications

References 7 publications

Highly selective electroplated nickel mask for lithium niobate dry etching

Highly selective electroplated nickel mask for lithium niobate dry etching

Lithium niobate surface structuration for phononic crystal fabrication

Quantum Entanglement of Dark Matter

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