“…The concept of vdWE was initially implemented on 2D-on-2D materials, after which it was rapidly extended to 3D-on-2D materials, which provide additional design freedom for the preparation of semiconductor devices. Till now, several 2D materials (such as graphene, [57] h-BN, [58] and TMDs [36a,59] ) and substrates (such as SiC, [26a,60] quartz, [61] Si, [12d,33d,62] sapphire, [25,37,63] and Si/SiO 2 [64] ) have been explored. In contrast to the rapid advancement of epitaxial technology, understanding regarding the underlying physics of vdWE is seriously lagging.…”