Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers

Lawrie, Kirsten Jean; Blakey, Idriss; Blinco, James P.; Cheng, Han-Hao; Gronheid, Roel; Jack, Kevin S.; Pollentier, Ivan; Leeson, Michael J.; Younkin, Todd R.; Whittaker, Andrew K.

doi:10.1039/c0jm03288c

Cited by 47 publications

(41 citation statements)

References 46 publications

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“…[2][3][4] The concepts to be considered, among others, include essentially non-chemically amplied resists (n-CARs) and hybrids. [4][5][6][7][8][9][10][11][12][13][14][15] The design paradigm has to incorporate the basic principles of conventional resists superimposed with the specic requirements of EUVL for attaining the lower nodes. 12,15,16 The interaction of the resist thin lms with high energy EUV photons (13.5 nm) is a very complex process triggered by EUV radiation that breaks the chemical bonds and simultaneously produces ablation and a high yield of secondary electrons.…”

Section: Introductionmentioning

confidence: 99%

EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer

et al. 2018

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Section: Introductionmentioning

confidence: 99%

EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer

et al. 2018

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“…On the other hand, high‐frequency roughness can cause local variations in voltage, which may affect the current leakage, or the threshold voltages of transistors 19, 20. Despite many studies into mediating this phenomenon there is currently no process or material that can reduce LER to the targets set by the semiconductor industry 21–26…”

Section: Introductionmentioning

confidence: 99%

Using Directed Self Assembly of Block Copolymer Nanostructures to Modulate Nanoscale Surface Roughness: Towards a Novel Lithographic Process

Chuang

Jack

Cheng

et al. 2012

Adv Funct Materials

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Nanoscale surface roughness is an important factor in determining the properties of surfaces and can affect the performance of a range of devices prepared by lithographic methods. Here, a method is reported, which enables modulation of the nanoscale roughness of surfaces through the directed self assembly (DSA) of positively charged polymersomes, composed of specifically designed block copolymers, onto negatively charged surfaces. Assembly of the polymersomes on surfaces can result in an increase in the nanoscale surface roughness; however, through a controlled annealing step we can also significantly reduce the nanoscale roughness of the original surface. The ability to decrease the roughness of lithographic patterns is expected to have a significant impact on the manufacture of integrated circuits.

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“…Many gains can be made by optimisation of resist formulations, although more disruptive technologies include the redesign of the resists and such approaches include: polymer bound PAG resists, [1][2][3][4][5][6][7] molecular glass resists [8][9][10][11][12][13][14][15][16] and chain scissioning resists. [17][18][19][20][21][22][23][24][25][26] In particular, polymer bound PAG resists have achieved a great deal of success as EUVL platforms, although improvements are still required for achieving the ITRS goals. Healing of LER following development is another approach that has led to significant improvements in LER.…”

Section: Introductionmentioning

confidence: 99%

Extending the scope of poly(styrene)-block-poly(methyl methacrylate) for directed self-assembly

et al. 2014

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Directed self-assembly (DSA) is a promising technique for extending conventional lithographic techniques by being able to print features with critical dimensions under 10 nm. The most widely studied block copolymer system is polystyreneblock-polymethyl methacrylate (PS-b-PMMA). The system is well understood in terms of its synthesis, properties and performance in DSA. However, PS-b-PMMA also has a number of limitations that impact on its performance and hence scope of application. The primary limitation is the low Flory-Huggins polymer-polymer interaction parameter (χ), which limits the size of features that can be printed by DSA. Another issue with block copolymers in general is that specific molecular weights need to be synthesized to achieve desired morphologies and feature sizes. We are exploring blending ionic liquid additiveswithPS-b-PMMAto increase the χ parameter. This allows smaller feature sizes to be accessed by PS-b-PMMA. Depending on the amount of additive it is also possible to tune the domain size and the morphology of the systems. These findings may expand the scope of PS-b-PMMA for DSA.

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Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers

Cited by 47 publications

References 46 publications

EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer

EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer

Using Directed Self Assembly of Block Copolymer Nanostructures to Modulate Nanoscale Surface Roughness: Towards a Novel Lithographic Process

Extending the scope of poly(styrene)-block-poly(methyl methacrylate) for directed self-assembly

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