Chalcogen doping of silicon via intense femtosecond-laser irradiation

Sheehy, Michael; Tull, Brian R.; Friend, Cynthia M.; Mazur, Eric

doi:10.1016/j.mseb.2006.10.002

Cited by 128 publications

(92 citation statements)

References 33 publications

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“…6 Fig. 6 Optical transmittance and reflectance curves as a function of wavelength of the sample obtained by pulsed laser mixing (PLM, ten laser shots at a fluence of 1.4 J/cm 2 ) of a 2.2-nm thick Se film into the Si substrate and for the bare silicon substrate. Reflectance scale is inverted so the absorptance can be evaluated graphically is a measure of the absorptance.…”

Section: Resultsmentioning

confidence: 99%

“…This material can be prepared [5] by irradiation of Si by femtosecond or nanosecond laser pulses in a chalcogen containing atmosphere such as SF 6 leading to a spiked chalcogen-bearing Si surface with a near-unity sub-band-gap absorptance. More recently, alternative fabrication methods have been developed, such as spreading a powder of the chalcogen dopants S, Se, and Te [6] or evaporation of chalcogen thin films [7] on the Si surface and subsequent femtosecond laser irradiation. It was found that the sub-band-gap absorptance is greater and more resistant to annealing for Se and Te than for S-doped Silicon.…”

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confidence: 99%

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Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

Tabbal

Kim²,

Woolf³

et al. 2009

Appl. Phys. A

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Selenium supersaturated silicon layers were fabricated by pulsed excimer laser induced liquid-phase mixing of thin Se films on Si(001) wafers. Sufficiently low Se coverage avoids destabilization of rapid epitaxial solidification, resulting in supersaturated solid solutions free of extended defects, as shown by transmission electron microscopy. The amount of retained Se depends on the original film thickness, the laser fluence, and the number of laser pulses irradiating the same spot on the surface. Using this method, Se has incorporated into the topmost 300 nm of the silicon with a concentration of 0.1 at.%. Channeling Rutherford backscattering spectrometry measurements show that the substitutional fraction can be as high as 75% of the total retained Se. These alloys exhibit strong sub-band-gap absorption with optical absorption coefficient ranging up to about 10 4 cm −1 , thus making them potential candidates for applications in Si-based optoelectronic devices. PACS 87.15. Nt · 78.66.Db · 79.20.Ds

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

Tabbal

Kim²,

Woolf³

et al. 2009

Appl. Phys. A

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“…Similar work on Si implanted and annealed with other chalcogen species, such as Se and Te, has been presented elsewhere. 16 ' 17 Their characterization showed that these compounds also present subband-gap absorption features. Several analogies observed in the fabrication procedure and the properties of chalcogen-implanted and Tiimplanted Si compounds have encouraged research devoted to obtaining a photovoltaic material with an IB in its electronic structure.…”

Section: Introductionmentioning

confidence: 99%

Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al)

et al. 2010

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This first-principles study describes the properties of Si implanted with several chalcogen species (S, Se, Te) at doses considerably above the equilibrium solubility limit, especially when coimplanted with the group III atoms B and Al. The measurements of chalcogen-implanted Si show strong optical absorption in the infrared range. The calculations carried out show that substitution of Si by chalcogen atoms requires lower formation energy than the interstitial implantation. In the resulting electronic structure, at concentrations cióse to 0.5%, an impurity band determined by the properties of the chalcogens introduced is observed in the forbidden energy gap of Si. Although this band is a few tenths of an electrón volt wide, it remains energetically isolated from both the valence and the conduction bands. Appropriate coimplantation with group III elements allows control over the occupation of the intermedíate band while modifying its energies only slightly. A modérate energy gain (especially small for B) seems to be obtained when p-doping atoms occupy the sites next to those of the chalcogens. Therefore, the apparent electrostatic attraction between species that in isolation would act as acceptors and double donors is smaller than expected. The intermediate-band properties have been preserved for all of the coimplanted compounds analyzed here, regardless of the species involved or the distance between them, which constitutes an appreciable advantage for the design of new experimental materials. PACS number(s): 71.20. Be, 71.15.Mb, 71.28.+d

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“…Similarly, arrays of geometric tapers and wedges have been employed to reduce the physical envelope required for calibration targets and loads. [5][6][7] Gold black, 8,9 silicon black, 10 and carbon nanotubes [11][12][13] provide examples of low-dielectric-contrast media exhibiting high-absorptance bandwidths.…”

Section: Introductionmentioning

confidence: 99%

A broadband micro-machined far-infrared absorber

Wollack

Datesman

Jhabvala

et al. 2016

Review of Scientific Instruments

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The experimental investigation of a broadband far-infrared meta-material absorber is described. The observed absorptance is > 0.95 from 1 − 20 THz (300 − 15 µm) over a temperature range spanning 5 − 300 K. The meta-material, realized from an array of tapers ≈ 100 µm in length, is largely insensitive to the detailed geometry of these elements and is cryogenically compatible with silicon-based micro-machined technologies. The electromagnetic response is in general agreement with a physically motivated transmission line model.

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Chalcogen doping of silicon via intense femtosecond-laser irradiation

Cited by 128 publications

References 33 publications

Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al)

A broadband micro-machined far-infrared absorber

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