1992
DOI: 10.1016/0921-5107(92)90035-8
|View full text |Cite
|
Sign up to set email alerts
|

Chalcogen interdiffusion in PbSe/PbTe heterostructures

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

1994
1994
2008
2008

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(1 citation statement)
references
References 4 publications
0
1
0
Order By: Relevance
“…One of the major drawbacks of these techniques is the use of high temperatures for the growth of films which results in heatinduced interdiffusion [27] of elements in adjacent structure layers, which can degrade deposit quality. Electrodeposition is therefore an appealing technique for the formation of complex compound semiconductor structures, as it can be performed at or near room temperature, minimizing interdiffusion.…”
Section: Introductionmentioning
confidence: 99%
“…One of the major drawbacks of these techniques is the use of high temperatures for the growth of films which results in heatinduced interdiffusion [27] of elements in adjacent structure layers, which can degrade deposit quality. Electrodeposition is therefore an appealing technique for the formation of complex compound semiconductor structures, as it can be performed at or near room temperature, minimizing interdiffusion.…”
Section: Introductionmentioning
confidence: 99%