Chalcogenide memory arrays: characterization and radiation effects

Maimon, J.; Hunt, K.; Burcin, L.; Rodgers, J.

doi:10.1109/tns.2003.821377

Cited by 69 publications

(38 citation statements)

References 9 publications

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“…These applications exploit differences in optical [1] or electrical [2] properties between the crystalline and amorphous phases of the same material. One can understand the forces driving the transformations of the material through a study of the local atomic structure.…”

Section: Introductionmentioning

confidence: 99%

EXAFS study of amorphous Ge2Sb2Te5

Baker

Paesler

Lucovsky

et al. 2006

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

EXAFS study of amorphous Ge2Sb2Te5

Baker

Paesler

Lucovsky

et al. 2006

Journal of Non-Crystalline Solids

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“…'Phase change' applications utilize differences in optical or electrical properties between the crystalline and amorphous phases of the same material. Optical storage applications utilize small differences (approximately 20%) in the reflectivity [1], while electronic applications utilize a large difference (factor of approximately 10 3 ) in electrical conductivity [2]. In this technology, the most commonly employed composition is Ge 2 Sb 2 Te 5 .…”

Section: Introductionmentioning

confidence: 99%

Optical and electronic properties of Ge–Sb–Te films

Taylor

2006

Journal of Non-Crystalline Solids

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“…Furthermore, studies of chalcogenide semiconducting materials have received attention because of the material's uses in reversible phase change applications. These applications exploit differences in optical [14] or electrical [15] properties between the crystalline and amorphous phases of the same material.…”

Section: Introductionmentioning

confidence: 99%

Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

Badr

Ramadan

Thorrya

2011

J Mater Sci: Mater Electron

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Chalcogenide amorphous thin films of the modification (As 2 S 3 ) 0.95 Cu 0.05 were prepared using a thermal evaporation technique. The optical properties of the resultant films were investigated based on the transmittance spectra in the photon energy range 1.6-2.82 eV. Thicknesses of the films under study were determined using the envelope technique based on the transmittance spectra. The optical measurements were carried out over the conditional temperature extending from 77 to 300 K. The results of the mentioned measurements are conductive tools in investigating the electronic structures of the Chalcogenide Glasses, however the analysis of the experimental results provide information about the optical gap width and elucidate the broadness of the band tail that may disturb the band gap edges. Moreover, the single-effective oscillator was implemented in calculating both the oscillation and dispersion energies of the films under investigation. The static refractive index and the static dielectric constant were also determined for these films.

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Chalcogenide memory arrays: characterization and radiation effects

Cited by 69 publications

References 9 publications

EXAFS study of amorphous Ge2Sb2Te5

EXAFS study of amorphous Ge2Sb2Te5

Optical and electronic properties of Ge–Sb–Te films

Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

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