Advances in Chemical Mechanical Planarization (CMP) 2022
DOI: 10.1016/b978-0-12-821791-7.00010-1
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Challenges and solutions for post-CMP cleaning at device and interconnect levels

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Cited by 5 publications
(2 citation statements)
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“…9,[13][14][15] However, these traditional methods often require prolonged processing times and consume a substantial amount of abrasive slurry, leading to environmental concerns. 4,13,16,17 To address these challenges, a novel nano/ sub-micron diamond slurry technology has been developed, specifically designed for precision polishing of optoelectronic materials. This technology offers unique advantages, including repeatable and stable polishing processing with significantly lower slurry consumption (1% to 5% of traditional slurry consumption) and decrease processing time (2 to 3 h).…”
Section: Introductionmentioning
confidence: 99%
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“…9,[13][14][15] However, these traditional methods often require prolonged processing times and consume a substantial amount of abrasive slurry, leading to environmental concerns. 4,13,16,17 To address these challenges, a novel nano/ sub-micron diamond slurry technology has been developed, specifically designed for precision polishing of optoelectronic materials. This technology offers unique advantages, including repeatable and stable polishing processing with significantly lower slurry consumption (1% to 5% of traditional slurry consumption) and decrease processing time (2 to 3 h).…”
Section: Introductionmentioning
confidence: 99%
“…Conventional chemical mechanical polishing (CMP) techniques have been widely employed for achieving surface planarization and controlling atomic-level surface roughness 9 , 13 15 However, these traditional methods often require prolonged processing times and consume a substantial amount of abrasive slurry, leading to environmental concerns 4 , 13 , 16 , 17 . To address these challenges, a novel nano/sub-micron diamond slurry technology has been developed, specifically designed for precision polishing of optoelectronic materials.…”
Section: Introductionmentioning
confidence: 99%