Challenges in large-area, thin-film CIGS modules

Laser patterning of P2 interconnect via in thin-film CIGS PV modules

“…1a and b). Although the process is used where mechanical patterning is not an alternative, direct benefits have been reported such as reduced interconnect resistivity [9,10]. Other researchers have found that the resistivity of CIGS-based interconnects is higher than direct Mo-ZnO contacts [8].…”

“…Interconnect resistivity in a thin-film PV module can be evaluated by different structures [11][12][13]. Furthermore, the precision and dimension of the laser beam can aid in reducing the area loss due to interconnect zone width, thereby improving the efficiency of the modules [9,10]. If indeed a reduced interconnect width can be coupled with a lowered interconnect series resistance, this could mean a significant increase in module efficiency.…”

Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final technical report, 14 December 1995--31 December 1996

“…The model also accounted for interconnect resistance, interconnect area loss and optical loss in the front transparent contact. This approach is described in more detail elsewhere [10,12]. This model was used very effectively to estimate the optimum module segment width, and to examine the sensitivity and impact of sheet resistivity on module segment width.…”

“…This improvement, and the concomitant gain in fill factor would yield efficiencies approaching 14% on modules having a short circuit current and open circuit voltage comparable to the record module. Comparison of curr ent -voltage characteristics of small area devices made using absorber deposition times of 10 and 20 minutes…”

“…Comparison of quantum efficiency of small area devices made using absorber deposition times of 10 and 20 minutes 27 Distribution of small area device efficiencies for three CIGS deposition temperatures 28 Scatter plot of small area device efficiencies as a function of Cu/(In+Ga) ratio 30 Contour plot of Cu/(In+Ga) ratio on 9" x 9" substrate 31 Photograph of CIGS absorber on scribed Mo/glass 9" x 9" substrate 32 J-V characteristics of a 15.5 % solar device…”