2010
DOI: 10.1016/j.jcis.2010.07.055
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Change in the microstructure at W/Si interface and surface by swift heavy ions

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Cited by 4 publications
(2 citation statements)
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“…Further studies have been performed by several research groups on Mn/Si single and multilayer systems [535], a-Si/Mn/aSi [554], V/Si [237], Si/Me/Si (Me = V, Fe, Co) [555] and W/Si [556] using 120 MeV Au 9+ ions, Mn/p-Si thin film [220,557] using 100 MeV Fe 7+ ions, to investigate the interface mixing under SHI irradiation which leads to the formation of silicide and they also tried to develop and understand the atomic motion leading effects. Finally, present way to synthesizing silicide through SHI beam mixing is a good choice in order to control the depth and interfacial properties.…”
Section: Zr/si and Mo/simentioning
confidence: 99%
“…Further studies have been performed by several research groups on Mn/Si single and multilayer systems [535], a-Si/Mn/aSi [554], V/Si [237], Si/Me/Si (Me = V, Fe, Co) [555] and W/Si [556] using 120 MeV Au 9+ ions, Mn/p-Si thin film [220,557] using 100 MeV Fe 7+ ions, to investigate the interface mixing under SHI irradiation which leads to the formation of silicide and they also tried to develop and understand the atomic motion leading effects. Finally, present way to synthesizing silicide through SHI beam mixing is a good choice in order to control the depth and interfacial properties.…”
Section: Zr/si and Mo/simentioning
confidence: 99%
“…To the best of our knowledge, no SHIs irradiation has been reported for W-SiC which is vital in the behaviour of this composite in harsh environments where it is used. However, the effect of SHIs (with energies of 120 MeV) in W-Si contacts has been investigated at different fluences [18]. The reaction between W and Si were only observed after irradiation at a fluence of 10 13 cm -2 .…”
Section: Introductionmentioning
confidence: 99%