“…Further studies have been performed by several research groups on Mn/Si single and multilayer systems [535], a-Si/Mn/aSi [554], V/Si [237], Si/Me/Si (Me = V, Fe, Co) [555] and W/Si [556] using 120 MeV Au 9+ ions, Mn/p-Si thin film [220,557] using 100 MeV Fe 7+ ions, to investigate the interface mixing under SHI irradiation which leads to the formation of silicide and they also tried to develop and understand the atomic motion leading effects. Finally, present way to synthesizing silicide through SHI beam mixing is a good choice in order to control the depth and interfacial properties.…”