2005
DOI: 10.1016/j.physe.2004.07.001
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Change of majority carrier type in PbS nanoparticle films

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Cited by 5 publications
(5 citation statements)
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“…In particular, the n s 2 electrons in Pb 2+ and Sn 2+ are not inert but instead form chemical bonds with ligand anions. , Therefore, the n s 2 electrons are not regarded as a lone pair in a strict sense. On the other hand, from the viewpoint of electrical properties, the ab initio calculations have also indicated that the Pb 6s and Sn 5s orbitals hybridize with the VBM in PbO, PbS, and SnO, suggesting that these orbitals contribute to the formation of hole-transport properties in known p-type semiconductors such as PbS and SnO. However, as shown in the next section, very similar hole-transport properties were observed in BiCuO Ch and LaCuO Ch , in contrast to the cases of PbS and SnO. Therefore, we examined further the electronic structures of BiCuO Ch using DFT calculations, as described in a later section.…”
Section: Resultsmentioning
confidence: 83%
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“…In particular, the n s 2 electrons in Pb 2+ and Sn 2+ are not inert but instead form chemical bonds with ligand anions. , Therefore, the n s 2 electrons are not regarded as a lone pair in a strict sense. On the other hand, from the viewpoint of electrical properties, the ab initio calculations have also indicated that the Pb 6s and Sn 5s orbitals hybridize with the VBM in PbO, PbS, and SnO, suggesting that these orbitals contribute to the formation of hole-transport properties in known p-type semiconductors such as PbS and SnO. However, as shown in the next section, very similar hole-transport properties were observed in BiCuO Ch and LaCuO Ch , in contrast to the cases of PbS and SnO. Therefore, we examined further the electronic structures of BiCuO Ch using DFT calculations, as described in a later section.…”
Section: Resultsmentioning
confidence: 83%
“…Standard deviations, which are estimated from those of the lattice parameters and the fractional coordinates, are all smaller than 0.002 Å. orbitals hybridize with the VBM in PbO, PbS, and SnO, suggesting that these orbitals contribute to the formation of hole-transport properties in known p-type semiconductors such as PbS and SnO. [42][43][44] However, as shown in the next section, very similar hole-transport properties were observed in BiCuOCh and LaCuOCh, in contrast to the cases of PbS and SnO. Therefore, we examined further the electronic structures of BiCuOCh using DFT calculations, as described in a later section.…”
Section: Resultsmentioning
confidence: 95%
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“…The electronic properties of semiconductors, such as PbO, PbS, and SnO, are influenced by the contribution of lone pair-like ns electrons at the VBM, [60][61][62][63][64] so the role of analogous electronic states in BiCuOSe and BiCuOS was studied. The ns electrons of dianionic chalcogenides constitute core energy levels, but extend into the crystal lattice.…”
Section: Resultsmentioning
confidence: 99%
“…Such a charge density distribution is also observed in other 𝑛𝑠 2 -based compounds. [9,23,24] In addition, we can also see that there is a distribution of electronic states between Ge-As atoms indicating the presence of covalent bonds between Ge-As atoms, and it forms a conductive network for hole transport of GeAs. The white background means that there is no charge density distribution in this area.…”
mentioning
confidence: 83%