Changes and challenges of photovoltaic inverter with silicon carbide device

Zeng, Zheng; Shao, Wei; Chen, Hao; Hu, Borong; Chen, Wensuo; Li, Hui; Li, Ran

doi:10.1016/j.rser.2017.04.096

Cited by 42 publications

(23 citation statements)

References 96 publications

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“…Then by substituting equation (5) and (6) in equation 4, The mathematical equation used to evaluate the SiC MOSFET's total switching losses can be expressed as:…”

Section: ) Switching Energies Lossmentioning

confidence: 99%

“…Every year, the prices of SiC semiconductor devices, including SiC diode and SiC MOSFET are becoming lower than the previous year. This feature and other technical features which previously mentioned, made SiC semiconductor devices to replace Si semiconductor devices for the PV inverter conversion system [5]. The Voltage Oscillations in SiC MOSFET is studied in [6] based on half bridge converter to achieve high power density for converter.…”

Section: Introductionmentioning

confidence: 99%

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Power Loss Model and Efficiency Analysis of Three-Phase Inverter Based on SiC MOSFETs for PV Applications

et al. 2019

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This paper presents the power loss model analysis and efficiency of three-level neutral-pointclamped (3L-NPC) inverter that is widely employed in solar photovoltaic energy conversion system. A silicon carbide (SiC) 3L-NPC inverter is developed in this paper by employing wide bandgap semiconductor power devices, such as SiC MOSFET and SiC diode (SiC D). These devices are used due to their superior characteristics over silicon (Si) semiconductor devices for the reduction of inverter power losses, and as a result, an improving efficiency at the high switching frequency. Accurate and detailed power loss calculation formula and power loss distribution over switching devices of the SiC 3L-NPC inverter are derived according to the modulation technique and inverter operation. The switching energy loss of SiC MOSFET is then measured and determined experimentally via inductive clamp double pulse test (DPT) at the real working condition of the circuit. Afterward, this experimental data is used in the thermal description file of the device's library of PLECS simulation software to determine the total power loss of SiC 3L-NPC inverter. The developed simulation model replicates the real operating conditions of the 3L-NPC inverter. This method gives results close to the practical test. Finally, the power loss of SiC 3L-NPC inverter is measured and compared with the theoretical results. Furthermore, SiC MOSFET and SiC D are employed to achieve high system efficiency at the high switching frequency. The results verify the features of SiC 3L-NPC inverter, the corresponding modulation technique used and their effects on reducing and improving power loss in solar SiC photovoltaic inverters. INDEX TERMS Three-level neutral-point clamped inverter (3L-NPC), SiC MOSFET, power loss, DPT-double pulse test, PLECS.

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“…Then by substituting equation (5) and (6) in equation 4, The mathematical equation used to evaluate the SiC MOSFET's total switching losses can be expressed as:…”

Section: ) Switching Energies Lossmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Power Loss Model and Efficiency Analysis of Three-Phase Inverter Based on SiC MOSFETs for PV Applications

et al. 2019

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“…Due to the challenge of imbalance current, current de-rating is inevitable to design and use the parallel SiC MOSFETs. Current capacities of parallel devices are not fully utilized, which is undesired and uneconomical [11], [12]. Therefore, the transient imbalance current should be carefully addressed for high-capacity applications of parallel SiC MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Imbalance Current Analysis and Its Suppression Methodology for Parallel SiC MOSFETs with Aid of a Differential Mode Choke

Zeng

Zhang

2020

IEEE Trans. Ind. Electron.

Self Cite

104

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Parallel connection of SiC MOSFETs is a cost-effective solution for high-capacity power converters. However, transient imbalance current, during turn-on and-off processes, challenges the safety and stability of parallel SiC MOSFETs. In this paper, considering the impact factors of device parameters, circuit parasitics, and junction temperatures, in-depth mathematical models are created to reveal the electro-thermal mechanisms of the imbalance current. Moreover, with the incorporation of a differential mode choke (DMC), an effective approach is proposed to suppress the imbalance current among parallel SiC MOSFETs. Physic concepts, operation principles, and design guidelines of the DMC suppression method are fully presented. Besides, to reduce the equivalent leakage inductance and equivalent parallel capacitance of the DMC, winding patterns of the DMC are comparatively studied and optimized to suppress turn-off over-voltage and switching ringing. Concerning the influence of winding patterns, load currents, gate resistances, and junction temperatures, experimental results are comprehensively demonstrated to confirm the validity of theoretical models and the function of the proposed DMC suppression method. It is turned out the low-cost DMC is easy to design and utilize without complex feedback circuits or control schemes, which is a cost-effective component to guarantee consistent and synchronous on-off trajectories of parallel SiC MOSFETs. Index Terms-Parallel SiC MOSFETs, mechanism of imbalance current, consistency and synchronization of on-off trajectories, differential mode choke.

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“…On the one hand, it can reduce the switching loss. On the other hand, when using semiconductor in the devices, its stability can be easily affected by the parasitic components of the system [16] - [18], which may affect the transient stability of the semiconductor, and worse, make great damage to the system.…”

Section: Motivationmentioning

confidence: 99%

“…the duty ratio, + ′ = 1, vin is the input voltage, vo is output voltage, iC is the current of the capacitance, vL is the voltage of inductance, R is the load.Then considering the character of the inductance and capacitance, the current of capacitance and the voltage of inductance can be written as(16) and (…”

mentioning

confidence: 99%

Stability of power electronic system

Miao¹

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Power electronic system is widely used and plays great important role in different industries, so the stability of power electronic system becomes a vital problem. To make sure that the system keeps stable, the stability criteria should be used to do the stability analysis of power electronic systems. Usually, the stability analysis of power electronic system can be divided in three parts: switch test, converter and converters. The challenges in the three parts are as follows: In the converter part, the single

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Changes and challenges of photovoltaic inverter with silicon carbide device

Cited by 42 publications

References 96 publications

Power Loss Model and Efficiency Analysis of Three-Phase Inverter Based on SiC MOSFETs for PV Applications

Power Loss Model and Efficiency Analysis of Three-Phase Inverter Based on SiC MOSFETs for PV Applications

Imbalance Current Analysis and Its Suppression Methodology for Parallel SiC MOSFETs with Aid of a Differential Mode Choke

Stability of power electronic system

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