This paper presents the power loss model analysis and efficiency of three-level neutral-pointclamped (3L-NPC) inverter that is widely employed in solar photovoltaic energy conversion system. A silicon carbide (SiC) 3L-NPC inverter is developed in this paper by employing wide bandgap semiconductor power devices, such as SiC MOSFET and SiC diode (SiC D). These devices are used due to their superior characteristics over silicon (Si) semiconductor devices for the reduction of inverter power losses, and as a result, an improving efficiency at the high switching frequency. Accurate and detailed power loss calculation formula and power loss distribution over switching devices of the SiC 3L-NPC inverter are derived according to the modulation technique and inverter operation. The switching energy loss of SiC MOSFET is then measured and determined experimentally via inductive clamp double pulse test (DPT) at the real working condition of the circuit. Afterward, this experimental data is used in the thermal description file of the device's library of PLECS simulation software to determine the total power loss of SiC 3L-NPC inverter. The developed simulation model replicates the real operating conditions of the 3L-NPC inverter. This method gives results close to the practical test. Finally, the power loss of SiC 3L-NPC inverter is measured and compared with the theoretical results. Furthermore, SiC MOSFET and SiC D are employed to achieve high system efficiency at the high switching frequency. The results verify the features of SiC 3L-NPC inverter, the corresponding modulation technique used and their effects on reducing and improving power loss in solar SiC photovoltaic inverters. INDEX TERMS Three-level neutral-point clamped inverter (3L-NPC), SiC MOSFET, power loss, DPT-double pulse test, PLECS.

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