Changes in composite nc-Si-SiO2 thin films caused by 20 MeV electron irradiation

Nesheva, D.; Petrik, P.; Hristova-Vasileva, Temenuga; Fogarassy, Zsolt; Kalas, Benjámin; Šćepanović, M.; Kaschieva, S.; Дмитриев, С. Н.; Antonova, K.

doi:10.1016/j.nimb.2019.05.035

Cited by 2 publications

(1 citation statement)

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“…The effect of 20 MeV electron beam irradiation on the phase separation and Si nanocluster formation in homogeneous SiO 1.2 and SiO 1.3 films has been investigated at fluences of 2.4 × 10 14 , 7.2 × 10 14 , 1.44 × 10 15 , and 3.6 × 10 15 electrons/cm 2 . , The irradiation at fluence of 7.2 × 10 14 electrons/cm 2 has led to small changes in the optical constants and the formation of very small amorphous Si (a-Si) nanoclusters. The normalized pair distributions measured for the non-irradiated and irradiated SiO x samples are shown in Figure .…”

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 99%

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Nesheva

2023

ACS Omega

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Oxide-based materials have a variety of applications in chemical sensing and photocatalysis, thin-film transistors, complex-oxide field-effect transistors, nonvolatile memories, resistive switching, energy conversion, topological oxide electronics, and many others. The radiation resistance of these materials in such devices plays an important role in device operation in radiation environment, and this attracts much attention in the research area. In spite of damage in a number of cases high-energy particles may have a beneficial effect on the target. In this mini-review article examples of both creation of defects and beneficial changes in the structure and properties of homogeneous and nanostructured oxides caused by high-energy electron and neutron irradiation are given by considering some recently published results. First, the attention is turned to ionizing and displacement effects of electron and neutron irradiation in homogeneous bulk and thin-film oxides reported in the literature. Then, the effect of electron and neutron irradiation on nanostructured oxides and semiconductor nanoparticles embedded in an oxide matrix is regarded. Considerable attention is paid to silicon oxide layers since they are widely used in microelectronic products, which are among the most manufactured devices in human history. Processes of irradiation-induced lattice rearrangement, compositional changes, growth of nanoparticles and their size reduction, creation of point defects and their complexes, electron−hole generation, and charge trapping are discussed.

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Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 99%

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Nesheva

2023

ACS Omega

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Influence of fast neutron irradiation on the phase composition and optical properties of homogeneous SiOx and composite Si–SiOx thin films

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Changes in composite nc-Si-SiO2 thin films caused by 20 MeV electron irradiation

Cited by 2 publications

References 28 publications

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Influence of fast neutron irradiation on the phase composition and optical properties of homogeneous SiOx and composite Si–SiOx thin films

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Changes in composite nc-Si-SiO2 thin films caused by 20 MeV electron irradiation

Cited by 2 publications

References 28 publications

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Influence of fast neutron irradiation on the phase composition and optical properties of homogeneous SiOx and composite Si–SiOx thin films

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Changes in composite nc-Si-SiO2 thin films caused by 20 MeV electron irradiation