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Marcinkevičius, Saulius; Siegert, J.; León, R.; Čechavičius, Bronislovas; Magness, B.; Taylor, W. A.; Lobo, Charlene

doi:10.1103/physrevb.66.235314

Cited by 35 publications

(25 citation statements)

References 30 publications

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“…Starting with un-bombarded material with a lifetime of 140 ps the initial decrease of PL with decreasing lifetime (increasing dose) is much faster than a linear behavior. Similar behavior is observed at 300 K. It has been suggested that defects may enhance capture into the dots 4 in which case we would expect an initial linear decrease in PL with increasing dose then for the PL to be enhanced above the dash line due to improved capture. Competition between the increased non-radiative recombination in the dots and the capture onto the dots does not account for this behavior.…”

Section: Effect Of Proton Bombardment On Inas Dots and Wetting Layer supporting

confidence: 64%

“…These claims rest on the reduction in the area of material exposed to the radiation, 3 though there may be benefits from localisation of carriers within each dot. 4,5 Here we quantify the effect of proton bombardment in quantum dot material and discuss implications for laser design to withstand such harsh environments using fundamental measurements including modal optical absorption, transmission electron microscopy (TEM), photoluminescence (PL), and PL lifetime as a function of proton dose. It is observed that the nonradiative recombination rate saturates for increasing proton dose and we suggest that multiple atomic displacements agglomerate in a dot to form a single recombination center.…”

Section: Effect Of Proton Bombardment On Inas Dots and Wetting Layer mentioning

confidence: 99%

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Effect of proton bombardment on InAs dots and wetting layer in laser structures

O'Driscoll

Blood

Smowton

et al. 2012

Applied Physics Letters

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The effect of proton bombardment on carrier lifetime and photoluminescence of InAs quantum dots was measured. Optical absorption and transmission electron microscopy show the dots retain their integrity under bombardment. A decrease in ground state photoluminescence with increasing dose is not explained by the decrease in dot carrier lifetime alone, but also by bombardment-induced non-radiative recombination in the wetting layer, which reduces the dot electron population at fixed excitation. To exploit the relative radiation immunity of quantum dots, it is necessary to maximise the dot density and capture probability per dot to minimize the effect of wetting layer recombination.

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Section: Effect Of Proton Bombardment On Inas Dots and Wetting Layer supporting

confidence: 64%

Section: Effect Of Proton Bombardment On Inas Dots and Wetting Layer mentioning

confidence: 99%

Effect of proton bombardment on InAs dots and wetting layer in laser structures

O'Driscoll

Blood

Smowton

et al. 2012

Applied Physics Letters

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“…6 Besides the probability to be captured into a QD or to recombine radiatively in the WL, the carriers may be trapped by a nonradiative recombination center ͑NRC͒ in the bulk or in the WL. 3,4 In the following discussion, we will regard NRCs as randomly distributed in the structure. The carrier velocity, mobility, and probability for trapping in a WL potential fluctuation as well as the dot density determine the probability for a carrier to be captured into a QD.…”

Section: Resultsmentioning

confidence: 99%

“…The lateral transport of carriers has been observed to be affected by several different mechanisms, such as trapping of carriers into WL localization potentials 1,2 or into nonradiative centers in the WL and in the surrounding material. 3,4 Even carrier hopping between the QDs has been demonstrated by employing time-resolved measurements. 5 In the present work, optical and in-plane transport properties of photoinduced carriers in InAs/ GaAs QD structures are studied.…”

Section: Introductionmentioning

confidence: 99%

Magnetic field effects on optical and transport properties inInAs∕GaAsquantum dots

et al. 2006

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A photoluminescence study of self-assembled InAs/ GaAs quantum dots under the influence of magnetic fields perpendicular and parallel to the dot layer is presented. At low temperatures, the magnetic field perpendicular to the dot layer alters the in-plane transport properties due to localization of carriers in wetting layer ͑WL͒ potential fluctuations. Decreased transport in the WL results in a reduced capture into the quantum dots and consequently a weakened dot-related emission. The effect of the magnetic field exhibits a considerable dot density dependence, which confirms the correlation to the in-plane transport properties. An interesting effect is observed at temperatures above approximately 100 K, for which magnetic fields, both perpendicular and parallel to the dot layer, induced an increment of the quantum dot photoluminescence. This effect is ascribed to the magnetic confinement of the exciton wave function, which increases the probability for carrier capture and localization in the dot, but affects also the radiative recombination with a reduced radiative lifetime in the dots under magnetic compression.

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“…The lateral carrier transport (in the plane of the WL) could be affected by carrier hopping between QD's [13], by trapping of migrating particles into localized states of the WL [14] or into nonradiative centers [15] in the surrounding media. A more efficient carrier transfer from the WL into the QD's via radiation-induced defects in the WL has been reported [16]. A magnetic field directed perpendicular to the plane of the structure was observed to limit the lateral transport of carriers [17].…”

Section: Introductionmentioning

confidence: 93%

Effect of an Electric Field on the Carrier Collection Efficiency of InAs Quantum Dots

et al. 2005

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Individual and multi quantum dots of InAs are studied by means of microphotoluminescence in case when, in addition to the principal laser exciting photoluminescence, second infrared laser is used. It is demonstrated that the absorption of the infrared photons effectively creates free holes in the sample, which leads to both change in the charge state of a quantum dot and to the considerable reduction of their photoluminescence signal. The later effect is explained in terms of an effective screening of the internal electric field, facilitating the carrier transport along the plane of a wetting layer, by the surplus holes from the infrared laser. It is shown that the effect of quenching of quantum dot photoluminescence gradually disappears at increased sample temperature (T ) and / or dot density. This fact is due to the essentially increased value of quantum dot collection efficiency which could be achieved at elevated sample temperatures for the individual quantum dots or even at low T for the case of multi quantum dots. It is suggested that the observed phenomena can be widely used in practice to effectively manipulate the collection efficiency and the charge state of quantum dot-based optical devices.

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Changes in luminescence intensities and carrier dynamics induced by proton irradiation inInxGa1−x

Cited by 35 publications

References 30 publications

Effect of proton bombardment on InAs dots and wetting layer in laser structures

Effect of proton bombardment on InAs dots and wetting layer in laser structures

Magnetic field effects on optical and transport properties inInAs∕GaAsquantum dots

Effect of an Electric Field on the Carrier Collection Efficiency of InAs Quantum Dots

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