Changes in morphology and growth rate of quasi-one-dimensional ZnSe nanowires on GaAs (100) substrates by metalorganic chemical vapor deposition

Leung, Y. P.; Liu, Z.; Hark, S. K.

doi:10.1016/j.jcrysgro.2005.02.025

Cited by 10 publications

(6 citation statements)

References 14 publications

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“…Further, nanowires are expected to play an important role as both interconnects and functional units in fabricating electronic, optoelectronic, electrochemical, and electromechanical devices at the nanometer scale . Up to now, vapor-phase synthesis is probably the most extensively explored approach to prepare all kinds of semiconductor nanowires, and the vapor–liquid–solid (VLS) process seems to be the most successful for growing nanowires. − This process was originally developed by Wagner and co-workers in the 1960s to produce micrometer-sized silicon whiskers and has been recently re-examined by Lieber et al for synthesizing one-dimensional nanostructures such as nanowires and nanorods from a rich variety of inorganic materials . However, the commonly grown out-of-plane nanowire geometry imposed by the VLS process appears as an obstacle to the current planar processing technology of microelectronic and optoelectronic devices. , To control the growth direction of nanowires from the substrate, for example, vertically- or horizontally aligned, we need a deep understanding of the basic physical chemistry involved in the VLS process.…”

Section: Introductionmentioning

confidence: 99%

Vertical or Horizontal: Understanding Nanowire Orientation and Growth from Substrates

Cao

Yang

2012

J. Phys. Chem. C

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We have established a theoretical model to address quantitatively the temperature-dependent growth of nanowire orientation and growth from substrates upon the vapor−liquid−solid (VLS) process by introducing thermal fluctuations. It was found that there is a critical temperature, depending on the Gibbs free energy of the nanowire nucleus, and that the nanowires with higher critical temperature tend to align horizontally to the substrate. Moreover, nanowires are vertically aligned on the substrate, or their growth direction is angled from the substrate, varying between 90 and 40°, if the critical temperature is lower. The critical temperatures of nanowires can be enormously dissimilar, which accounts for the fact that growth directions can be modulated by temperature. The developed theory explains the findings from a recent set of experiments on the temperature-dependent orientation of nanowires grown by the VLS process. These investigations concluded that thermal fluctuations play a crucial role in the VLS nanowire growth, and the preferred nanowire growth directions can be produced by temperature regulation, which would provide useful physical criteria in other types of experiments.

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Section: Introductionmentioning

confidence: 99%

Vertical or Horizontal: Understanding Nanowire Orientation and Growth from Substrates

Cao

Yang

2012

J. Phys. Chem. C

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“…Recently, we have used metalorganic vapour phase deposition (MOCVD) to grow ZnSe nanowires, nanoribbons and nanorods [1][2][3]. In comparison with most other methods, MOCVD seems to be able to yield these nanostructures with better optical properties [4].…”

Section: Introductionmentioning

confidence: 99%

Localized cathodoluminescence of individual ZnSe nanorods

Liu

Hark²

2006

Nanotechnology

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Highly oriented ZnSe nanorods were grown on a ZnSe epilayer on GaAs(001) substrate by metalorganic chemical vapour deposition without any introduced catalysts. Cathodoluminescence spectra and images of individual nanorods, projecting from the buffer layer, were obtained at various temperatures down to 4.5 K in a scanning electron microscope. They show that the luminescence of the nanorods is localized, with the near band edge and deep level related emissions originating predominantly from their interior and surface, respectively. The luminescence is also not uniform along the length of the nanorods. We attribute the strong surface luminescence to the post-growth oxidization of the nanorods when they were exposed in air. The temperature dependence of the cathodoluminescence spectra was also measured to study the energy gap of the nanorods, which was found to behave similarly to that of bulk ZnSe.

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“…As an important wide-band-gap semiconductor, ZnSe is one of the promising materials for fabricating short-wavelength opto-electronic devices such as blue-green laser diodes, blue-ultraviolet photodetector, saturable-absorber Q switch and film solar cells [1][2][3][4]. Recently, ZnSe 1D nanostructures have been synthesized by various techniques such as metal-organic chemical vapor deposition (MOCVD) [5,6], molecular beam epitaxy (MBE) [7,8] and wet chemical methods [9,10]. However, the reported ZnSe 1D nanostructures were almost in the form of nanowires with the lengths of several microns.…”

Section: Introductionmentioning

confidence: 99%

The growth and characterization of ZnSe nanoneedles by a simple chemical vapor deposition method

Fu¹,

Li²,

Wang³

et al. 2006

Journal of Crystal Growth

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Changes in morphology and growth rate of quasi-one-dimensional ZnSe nanowires on GaAs (100) substrates by metalorganic chemical vapor deposition

Cited by 10 publications

References 14 publications

Vertical or Horizontal: Understanding Nanowire Orientation and Growth from Substrates

Vertical or Horizontal: Understanding Nanowire Orientation and Growth from Substrates

Localized cathodoluminescence of individual ZnSe nanorods

The growth and characterization of ZnSe nanoneedles by a simple chemical vapor deposition method

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