ZnSe nanoribbons have been synthesized using sputter-coated gold films as catalysts via metalorganic chemical vapor deposition on Si (100) substrates. Both x-ray and selected area electron diffractions determine that they have the zinc-blende structure. High-resolution transmission electron microscopic investigations show that their structure is highly ordered and contains coherent twin lamellae near one edge but is essentially free of dislocations. Photoluminescence studies at 10 K show that sharp excitonic peaks dominate their spectra, reflecting their high purity and nearly perfect stoichiometry. New excitonic peaks are observed in the nanoribbons and their possible origins are discussed.

Zinc-blende-structured single-crystalline ZnSe nanowires and nanoribbons were grown on (001) silicon substrates by metal-organic chemical vapor deposition. The as-synthesized nanowires were characterized by x-ray powder diffraction and scanning electron microscopy. The diameters of the nanowires range from a few tens to 100 nm and the typical length is in the tens of micrometers. Individual strands of the nanowires were examined by transmission electron microscopy and cathodoluminescence spectroscopy. They were found to be single crystals elongated along the 〈112̄〉 crystallographic direction. Strong and narrow room-temperature band-gap light emissions indicate that their optical and electronic properties rival those of the epitaxial layers employed in diode lasers. A possible growth mechanism of the ZnSe nanowires is also discussed.

Growth and luminescence of zinc-blende-structured ZnSe nanowires by metal-organic chemical vapor depositionQuasi-one-dimensional ZnSe nanowires have been synthesized by metalorganic chemical vapor deposition on Si ͑001͒ substrates, sputter coated with gold catalyst, at various pressures using diethylzinc and diisopropylselendie. The nanowires appear to be randomly oriented on the substrate and some are slightly bent along their length. X-ray diffraction and scanning electron microscopy studies show that the nanowires are zincblende in structure and have a uniform cross section along its length, and an average diameter about 30 nm, regardless of growth pressure. Individual strands of the nanowires were examined by high-resolution transmission electron microscopy and were found to be single crystals elongated along the ͗112͘ crystallographic direction. Gold particles at the tips of the nanowires identified by transmission electron microscopy and atomic force microscopy indicate that the nanowires grow via the vapor-liquid-solid process. Room-temperature photoluminescence spectra of the ZnSe nanowires grown under different pressures show variations in their optical properties, despite their similarity in morphology and crystalline structure. At the optimal pressure of growth, strong near band-edge emission and very weak deep-level emissions are observed, indicating the low level of nonstoichiometric defects in the resulting ZnSe nanowires.

Well‐aligned ZnSe nanowires and nanorods can be grown on ZnSe epilayers on different GaAs substrates, with and without catalyst, by metal–organic chemical vapor deposition. Gold particles affect the number density, growth direction, and the morphology of the resulting nanostructures. In the absence of the gold catalyst, hexagonal nanorods grow along the <111> directions (see Figure). Growth defects on the epilayers may be the nucleation sites of the nanorods.

In this study, free standing crystalline ZnSe nanorings and nanowires have been fabricated on Au coated Si substrates by simple thermal evaporation of ZnSe powders. Ring-or wirelike morphology can be achieved in a controllable manner by using different reactor pressures during growth, while all the other conditions remain the same. Our results show that the ZnSe nanorings are wurtzite phase instead of the zinc-blende phase, observed in typical one-dimensional ZnSe nanostructures. The growth mechanism of the nanorings has been discussed, and the cathodoluminescence of the nanorings has been described.