Growth and luminescence of zinc-blende-structured ZnSe nanowires by metal-organic chemical vapor deposition

Zhang, X. T.; Liu, Z.; Leung, Y. P.; Li, Quan; Hark, S. K.

doi:10.1063/1.1638633

Cited by 107 publications

(69 citation statements)

References 15 publications

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“…Chan reported the Au-induced ZnSe nanowires grown along the ½112 direction on GaAs substrates without the sawtooth edge when the diameter of the nanowire was between 20 and 30 nm [2]. Meanwhile, the ½112 growth ZnSe nanobelt with a sawtooth edge was also reported by Zhang et al [23], with no obvious catalyst particles. The nanobelts were explained by the re-entrant corner mechanism in which the stacking faults and twin lamellae provided the self-perpetuating growth sites [3].…”

Section: Resultsmentioning

confidence: 81%

“…However, it is not likely to be the case here since no intentional dopants are introduced in the study. On the other hand, an excess of Zn in the ZnSe was reported to result in the emission at 2:03 eV [29], while the dislocations, stacking faults, and nonstoichiometric defects would result in the emission at 2:2 eV [23], which may be the origins of the deep-level emission peaks. For the DAP transition with a peak of 2:7 eV, it possibly comes from the trace impurities in the source materials during the thermal evaporation process [30].…”

Section: Resultsmentioning

confidence: 99%

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Largely extended light-emission shift of ZnSe nanostructures with temperature

Choy¹,

Leung²

2011

Appl. Opt.

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ZnSe nanowires and nanobelts with zinc blende structure have been synthesized. The morphology and the growth mechanisms of the ZnSe nanostructures will be discussed. From the photoluminescence (PL) of the ZnSe nanostructures, it is interesting to note that red color emission with only a single peak at the photon energy of 2 eV at room temperature is obtained while the typical bandgap transition energy of ZnSe is 2:7 eV. When the temperature is reduced to 150 K, the peak wavelength shifts to 2:3 eV with yellowish emission and then blue emission with the peak at 2:7 eV at temperature less than 50 K. The overall wavelength shift of 700 meV is obtained as compared to the conventional ZnSe of about 100 meV (i.e., sevenfold extension). The ZnSe nanostructures with enhanced wavelength shift can potentially function as visible light temperature-indicator. The color change from red to yellowish and then to blue is large enough for the nanostructures to be used for temperature-sensing applications. The details of PL spectra of ZnSe at various temperatures are studied from (i) the spectral profile, (ii) the half-width half-maximum, and (iii) the peak photon energy of each of the emission centers. The results show that the simplified configuration coordinate model can be used to describe the emission spectra, and the frequency of the local vibrational mode of the emission centers is determined.

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Section: Resultsmentioning

confidence: 81%

Section: Resultsmentioning

confidence: 99%

Largely extended light-emission shift of ZnSe nanostructures with temperature

Choy¹,

Leung²

2011

Appl. Opt.

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“…Many works reported the defect-related emissions between 500 and 700 nm, such as point defect Zn vacancies, Zn interstitials, and structure defects dislocations, stacking faults and so on [35][36][37]. In the PL spectrum of Fe 3+ doped ZnSe nanoribbon, the narrow FWHM of D1 and D2 and the sharp near band-edge emission have eliminated the possibility of point defects for the latter often strongly relax the FX emission.…”

Section: Resultsmentioning

confidence: 99%

Spin-Related Micro-Photoluminescence in Fe3+ Doped ZnSe Nanoribbons

et al. 2016

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Spin-related emission properties have important applications in the future information technology; however, they involve microscopic ferromagnetic coupling, antiferromagnetic or ferrimagnetic coupling between transition metal ions and excitons, or d state coupling with phonons is not well understood in these diluted magnetic semiconductors (DMS). Fe 3+ doped ZnSe nanoribbons, as a DMS example, have been successfully prepared by a thermal evaporation method. Their power-dependent micro-photoluminescence (PL) spectra and temperature-dependent PL spectra of a single ZnSe:Fe nanoribbon have been obtained and demonstrated that alio-valence ion doping diminishes the exciton magnetic polaron (EMP) effect by introducing exceeded charges. The d-d transition emission peaks of Fe 3+ assigned to the 4 T 2 (G) → 6 A 1 (S) transition at 553 nm and 4 T 1 (G) → 6 A 1 (S) transition at 630 nm in the ZnSe lattice have been observed. The emission lifetimes and their temperature dependences have been obtained, which reflected different spin-phonon interactions. There exists a sharp decrease of PL lifetime at about 60 K, which hints at a magnetic phase transition. These spin-spin and spin-phonon interaction related PL phenomena are applicable in the future spin-related photonic nanodevices.

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“…ZnSe has attracted intense research interest due to their advanced optical and electrical properties and potential applications in room-temperature continuous-wave laser, lightemitting diodes, blue and green light emitting devices [1] [2] [3]. Recently, one-dimensional nanomaterials have been extensively studied due to its novel and superior properties and potential applications as building blocks in nano-scale electronics [4] [5] [6] [7].…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Raman Scattering of ZnSe Nanowires

Shi¹,

Wang²,

Wang³

et al. 2016

AMPC

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We present a Raman scattering study of ZnSe over a temperature range from 80 to 580 K. Both of TO and LO modes of ZnSe nanowires are observed a red-shift with elevating temperature, and its intrinsic broadening is larger than that of bulk counterpart. The opticalphonon lifetime of ZnSe nanowires are longer than that of nanoparticles but shorter than that of bulk, which can be attributed to the different surface to volume ratios. Some overtones and multi-phonon peaks are also observed at high temperature due to the larger wave vector q. The 2TA 1 (K) and multi-phonon peaks TA(X,K) + LA(X) appears at the temperature that is higher than room temperature. The intensity of overtones acoustics TA(L) elevates with increasing temperature while the surface mode disappears at temperature higher than 296 K. Detailed investigations on temperature-dependent phonon characteristics provide essential component for understanding confined phonons effects at small scale.

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Growth and luminescence of zinc-blende-structured ZnSe nanowires by metal-organic chemical vapor deposition

Cited by 107 publications

References 15 publications

Largely extended light-emission shift of ZnSe nanostructures with temperature

Largely extended light-emission shift of ZnSe nanostructures with temperature

Spin-Related Micro-Photoluminescence in Fe3+ Doped ZnSe Nanoribbons

Temperature-Dependent Raman Scattering of ZnSe Nanowires

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