Spin-Related Micro-Photoluminescence in Fe3+ Doped ZnSe Nanoribbons

Abstract

Spin-related emission properties have important applications in the future information technology; however, they involve microscopic ferromagnetic coupling, antiferromagnetic or ferrimagnetic coupling between transition metal ions and excitons, or d state coupling with phonons is not well understood in these diluted magnetic semiconductors (DMS). Fe 3+ doped ZnSe nanoribbons, as a DMS example, have been successfully prepared by a thermal evaporation method. Their power-dependent micro-photoluminescence (PL) spectra and temperature-dependent PL spectra of a single ZnSe:Fe nanoribbon have been obtained and demonstrated that alio-valence ion doping diminishes the exciton magnetic polaron (EMP) effect by introducing exceeded charges. The d-d transition emission peaks of Fe 3+ assigned to the 4 T 2 (G) → 6 A 1 (S) transition at 553 nm and 4 T 1 (G) → 6 A 1 (S) transition at 630 nm in the ZnSe lattice have been observed. The emission lifetimes and their temperature dependences have been obtained, which reflected different spin-phonon interactions. There exists a sharp decrease of PL lifetime at about 60 K, which hints at a magnetic phase transition. These spin-spin and spin-phonon interaction related PL phenomena are applicable in the future spin-related photonic nanodevices.

The aggregation of Fe3+ and their d–d radiative transitions in ZnSe:Fe3+ nanobelts by CVD growth

“… 8,35 Hou et al prepared the Fe 3+ -doped ZnSe nanobelts successfully with two emission bands at 553 nm and 630 nm, respectively, which are attributed to the phenomenon of the transitions of 4 T 2 → 6 A 1 and 4 T 1 → 6 A 1 . 36 The different emission bands displayed by our as-prepared sample were similar to that reported by Begum et al , which is due to the site symmetry of the Fe 3+ ion in the host ZnSe material, which is identified as octahedral. 37 Hence, the abovementioned assignment is not plausible.…”

Structure and optical properties of SiO2 films with ZnSe nanocrystals formed by ion implantation

“…Following the demonstration of possible application of zinc selenide in photoelectronic devices, an intensive attention is paid to ZnSe as an alternative to the more toxic Cd-based materials. Indeed, ZnSe-based materials in such forms as thin films, nanocrystals (NCs), quantum wells, flower-shaped nanocrystals [1], nanoribbons [2], nanowires [3], hollow microspheres [4] and bulk crystals are applicable for fabrication of blue and green light-emitting diodes due to the direct band gap, infrared windows due to wide transmission wavelength range, lenses and prisms, and optically controlled switching devices due to giant photoresistivity.…”

Effects of Electron–Phonon Coupling and Spin–Spin Coupling on the Photoluminescence of Low-Dimensional Metal Halides

“…, Mn 2+ , Co 2+ , Ni 2+ , and Fe 3+ )-doped II–VI group semiconductors via chemical vapor deposition (CVD) methods. The EMP excitation in the luminescence behavior of dilute magentic semiconductors was found to have great application potential in spin nanophotonic devices and a new type of quantum light source. ,− Similar as in II–VI semiconductors, the EMP also plays an important role in LDMH materials, including enhancing luminous efficiency and regulating the emission band position and decay lifetime. In the next part, we will study the EMP effect on the photophysical mechanism of LDMHs.…”