2020
DOI: 10.12785/ijcds/090109
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Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT

Abstract: This paper investigates the temperature sensitivity and electrical characteristics of Silicon Nanowire Transistor (SiNWT) and Germanium Nanowire Transistor (GeNWT) depending on variable channel length (Lg). It also studies the possibility of using them as a temperature nanosensor. The MuGFET simulation tool was exploited to investigate the characteristics of the considered nanowire transistors. Current-voltage characteristics with different values of temperature with channel length [Lg = 25, 45, 65, 85 and 105… Show more

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