Temperature characteristics of Gate all around nanowire channel Si-TFET

Abdul-kadir, Firas Natheer; Hashim, Yasir; Abdullah, Waheb Abduljabbar Shaif

doi:10.1088/1742-6596/1755/1/012045

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…MBCFET exhibit the larger current (ION) is more 4.6 times comparison with conventional MOSFET, sub threshold slope (SS) is an ideal value (≈ 60 mV/dec) [51][52], DIBL and IOFF in Nanowire NWFET is better as compared to the NSFET [50]. Finally threshold voltage (VT) in MBCFET is better as a compared with FinFET devices [53][54][55][56][57]. Fig.…”

Section: Nsfet Finfet and Nwfet Comparisionmentioning

confidence: 96%

Review of Nanosheet Transistors Technology

Abdul-kadir¹,

Hashim²,

Shakib³

2021

Tikrit j. eng. sci.

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Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a review of this new nano-structure of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), this new device that consists of a metal gate material. Lateral nano-sheet FET is now targeting for 3nm Complementary MOS (CMOS) technology node. In this review, the structure and characteristics of Nano-Sheet FET (NSFET), FinFET and NanoWire FET (NWFET) under 5nm technology node are presented and compared. According to the comparison, the NSFET shows to be more impregnable to mismatch in ON current than NWFET. Furthermore, as comparing with other nanodimensional transistors, the NSFET has the superior control of gate all-around structures, also the NWFET realize lower mismatch in sub threshold slope (SS) and drain induced barrier lowering (DIBL).

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