Review of Nanosheet Transistors Technology

Abdul-kadir, Firas Natheer; Hashim, Yasir; Shakib, Mohammed Nazmus

doi:10.25130/tjes.28.1.05

Cited by 8 publications

(5 citation statements)

References 46 publications

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“…The germanium content of the SiGe layers should be reduced as much as feasible to mitigate lattice distortion and other deficiencies. [6][7][8] The etch selectivity does, however, increase with Ge concentration, and degradation of the silicon layers during inner spacer indentation or channel release etch will affect channel thickness and, consequently, threshold voltage. [8] Nanowire technology seems to be left behind compared to Nanosheet.…”

Section: Gaafet 3d Structurementioning

confidence: 99%

Introduction and commercial prospect of GAAFET

Jiang

2024

ACE

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As recent metal-oxide-semiconductor field-effect transistor (MOSFET) technology developed, gate length shrinks so that engineers lost control of the transistor due to short channel effect and enormous leakage power. To maintain gate-to-channel control of the device, a fin field-effect transistor (FINFET) has been introduced to replace planar MOSFET technology. The "FIN" structure allows further down-scaling of gate length compared to planar MOSFET. As process node technology progresses, gate length scaling is stalled, where a further decrease of gate length would receive undesirable results in order of power, performance, and area (PPA). To escalate the transistor density, a new MOSFET design is required to replace FINFET. Therefore, the gate-all-around Multi-Bridge-Channel MOSFET (GAAFET or MBCFET) is successfully induced to be the feasible solution.

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Section: Gaafet 3d Structurementioning

confidence: 99%

Introduction and commercial prospect of GAAFET

Jiang

2024

ACE

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“…28 Additionally, the outcome of temperature has also been studied on linearity and distortion FOMs. The linearity and distortion FOMs are estimated as per Equations (9)(10)(11)(12)(13)(14)(15)(16) and designed in relation of gate voltage.…”

Section: Impact Of Temperaturementioning

confidence: 99%

“…Nanosheet FETs offer performance and power efficiency advantages, but face challenges including complex manufacturing, variability in device parameters, and increased power consumption due to additional interfaces. Further research is needed to address these challenges and optimize nanosheet FET performance 6–9 . Among these designs, surrounded gate Nanowire MOSFET shows better immunity to short‐channel effects (SCEs) because of higher gate control 10,11 .…”

Section: Introductionmentioning

confidence: 99%

“…Further research is needed to address these challenges and optimize nanosheet FET performance. [6][7][8][9] Among these designs, surrounded gate Nanowire MOSFET shows better immunity to short-channel effects (SCEs) because of higher gate control. 10,11 Despite their promising characteristics, NWFETs, or Nanowire Field-Effect Transistors, exhibit certain drawbacks.…”

Section: Introductionmentioning

confidence: 99%

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Analytical analysis and linearity performance of dual metalhigh‐KSchottky nanowireFET(DM‐HK‐SNWFET)

Sharma

Nath

Deswal³

et al. 2023

Int J Numerical Modelling

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This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface potential, subthreshold current, subthreshold swing, and drain current have been expressed and analyzed by resolving 2D Poisson's equation with suitable boundary conditions. The analog performance of the device is verified by examining cut‐off frequency (fT), trans‐conductance frequency product (TFP), gain frequency product (GFP), and gain trans‐conductance frequency product (GTFP). The results show suitable RF circuit parameters with a high switching ratio (≈3 × 109) and low subthreshold swing (61 mV/decade) for NUD‐DM‐HK‐SNWFET. Additionally, linearity frequency of merits (FOMs) and distortion performance are also studied by numerically calculating higher order voltage and current intercept point (VIP2, VIP3, IIP3, IMD3); 1‐dB compression point and Harmonics distortions (HD2 and HD3) using transconductance (gm1) along with its higher derivatives gm2 and gm3. These parameters exhibit high‐level linearity and low‐level distortion at zero crossover points in NUD‐DM‐HK‐SNWFET, making it a better contender for low‐power and high‐performance applications.

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“…Switching to an NSFET solves most of the problems associated with a FinFET, including the need for constant scaling down, short channel regression, manufacturing complexity, and restricted device performance. It has been observed that the utilisation of NSFET is a suitable alternative for FinFET and nanowire transistors [4]. Mismatches in I ON current seem to have less of an effect on NSFETs than NWFETs [6].…”

Section: Introductionmentioning

confidence: 99%

The Artificial Neuron: Built From Nanosheet Transistors to Achieve Ultra Low Power Consumption

Sheriff,

Sakthivel

2024

IEEE Access

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The performance of semiconductors has greatly improved due to the miniaturization of the transistor. To shrink the size of a transistor, the channel length must be decreased. Short-channel effects become noticeable as the gate length is reduced. Short-channel effects are observable at dimensions below 7 nm as a consequence of the shorter gate length. However, nanosheet structures have been proposed to replace FinFET and nanowire transistors at the 7 nm and 3 nm technological nodes. The purpose of this research is to construct an artificial neuron based on nanosheet transistors and evaluate its spiking behaviour and power consumption. We are building a regular Axon Hillock and our proposed neuron model using GPDK 45 nm and nanosheet transistor 20 nm technology. The simulation results clearly show that the nanosheet transistor consumes less power than the GPDK 45 nm transistors. Furthermore, we verified the validity of our suggested neuron model by performing Monte Carlo simulation, PVT analysis, AC response, noise response and layout. Additionally, the proposed neuron was tested with a variety of input currents, including pulse current, ramp current, sinusoidal current, and arbitrary current, and their associated spike patterns were recorded. According to our research, nanosheet-based Axon Hillock consumes 156 fW, and our proposed neuron consumes 1.9 pW of power.

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Review of Nanosheet Transistors Technology

Cited by 8 publications

References 46 publications

Introduction and commercial prospect of GAAFET

Introduction and commercial prospect of GAAFET

Analytical analysis and linearity performance of dual metalhigh‐KSchottky nanowireFET(DM‐HK‐SNWFET)

The Artificial Neuron: Built From Nanosheet Transistors to Achieve Ultra Low Power Consumption

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