Channel length variation effect on performance parameters of organic field effect transistors

Mittal, Poornima; Kumar, Brijesh; Negi, Yuvraj Singh; Kaushik, Brajesh Kumar; Singh, Ranjodh

doi:10.1016/j.mejo.2012.07.016

Cited by 98 publications

(30 citation statements)

References 24 publications

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“…However, our OTFT achieved better performance in saturation: Higher saturated drain currents acted upon by much lower gate voltages (i.e., V G = 10 V and I Dsat = 17 nA) than the n-type OTFT from [ 26 ] (i.e., V G = 80 V and I Dsat = 5 nA). In our OTFT, the mobility of the carriers under saturation can be estimated by the following simple model [ 27 ]:

where W is the channel depth given by the probe’s diameter (500 μm), L is the channel length given by the distance between the source and drain probes (2 mm), I Dsat is the current from the saturation region (~17 nA for V G = 10 V in Figure 8 ), C PS is the specific capacity of the polystyrene layer (11 F/cm 2 ), V G is the gate voltage (10 V), V T is the threshold voltage (5 V), and μ n,sat is the electrons’ mobility when the OTFT works under saturation.…”

Section: Experimental Results and Discussion Of The Otft Demonstramentioning

confidence: 99%

Sulpho-Salicylic Acid Grafted to Ferrite Nanoparticles for n-Type Organic Semiconductors

et al. 2020

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A disadvantage of the use of pentacene and typical organic materials in electronics is that their precursors are toxic for manufacturers and the environment. To the best of our knowledge, this is the first report of an n-type non-toxic semiconductor for organic transistors that uses sulpho-salicylic acid—a stable, electron-donating compound with reduced toxicity—grafted on a ferrite core–shell and a green synthesis method. The micro-physical characterization indicated a good dispersion stability and homogeneity of the obtained nanofilms using the dip-coating technique. The in-situ electrical characterization was based on a point-contact transistor configuration, and the increase in the drain current as the positive gate voltage increased proved the functionality of the n-type semiconductor.

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Section: Experimental Results and Discussion Of The Otft Demonstramentioning

confidence: 99%

Sulpho-Salicylic Acid Grafted to Ferrite Nanoparticles for n-Type Organic Semiconductors

et al. 2020

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“…Indeed, the gate voltage VG is not equal to the gate to source voltage V ′ because source terminal is not grounded but its potential is raised by the amount RSID by the current ID flowing through RS,moreover for the drain voltage VD is not equal to the drain to source voltage V ′ because the source terminal is not grounded and the drain terminal is connected to VD throughRD so that the gate and drain voltage expressions are writtenas follows [48,61]:…”

Section: Contact Resistance Effects and Equivalent Circuit Of Dbp-tftmentioning

confidence: 99%

“…By substituting RC and µ that are given previously by (9) and (11), respectively in equation 10, we obtain the following expressions for the drain current ID in both regimes [61,64]: Table 1. Experimental electrical parameters of DBP-TFTs with different channel lengths.…”

Section: Contact Resistance Effects and Equivalent Circuit Of Dbp-tftmentioning

confidence: 99%

Characterization and modeling of organic thin-film transistors based π-conjugated small molecule tetraphenyldibenzoperiflanthene: Effects of channel length

Boukhili

Mahdouani

Bourguiga

et al. 2016

Microelectronic Engineering

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P-type organic thin filmtransistors (OTFTs) with different channel lengths have been fabricatedand characterized by thermal evaporation using the smalltetraphenyldibenzoperiflanthene (DBP) as an active material on Si/SiO2 substrate. The influence of the channel length onthe electrical performance of DBP based organic thinfilm transistors (DBP-TFTs) prepared with bottom gate-bottom contact in the linear and saturation regimeswere systematically examined in this work. All devices showed a significant increase in the output and transfer drain current as the channel lengths was decreased in the linear and saturation regimes. We have reported the variation of the electrical parameterssuch as transconductance (gm), fieldeffect mobility (lin and sat), contacts and total resistances (RC and RT), threshold voltage (Vth), total trap density (Ntrap), subthreshold slope (SS), the interface trap density (Dit), turn-on voltage (Von) and the ratio current (Ion/ Ioff)by channel length variation which are extracted from the experimental electrical data current-voltage of DBP-TFTs. We found that the field effect mobility is extremely dependent on the channel length dimensions. We also show that for smaller channel length, it results a good mobilityand a good ratio current of the DBP-TFTs with a short channel length (good saturation mobility and current ratio sat. max = 3x10-2 cm 2 V-1 s-1 , 1.6x10 4 , respectively,for L=2.5µm).The developed model shows a good agreement with the measured data for all values of channel lengths (L).

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“…Organic thin film transistors (OTFTs) are emerging as a significant component in recent research of organic electronics because of their mechanical flexibility and simple fabrication at low cost and low temperature [1][2][3]. OTFTs have shown remarkable use in the field of low cost, high volume large-area flexible/rollable displays, smart cards, bio-sensors, radio frequency identification tags and organic memory [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Analysis of static and dynamic performance of organic inverter circuits based on dual and single gate organic thin film transistors

Goswami¹,

Kumar²,

Kaushik³

et al. 2013

IET Circuits, Devices & Systems

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In this study, electrical behaviour of dual-gate (DG) and single-gate (SG) organic thin film transistors (OTFTs) is investigated using Atlas two-dimensional (2D) numerical device simulation. Compared with the SG, DG organic transistor shows improved performance because of the presence of two channels formed in DG device by charge carrier modulation. Furthermore, this study introduces all-p organic inverter circuits with diode-load and zero-V gs-load logic configurations using SG and DG structures. Static and dynamic behaviour of all-p organic inverter circuits is compared with addressing the effect of both the devices. A maximum voltage gain (A V) of 16 is obtained in zero-V gs-load logic using DG-OTFT, whereas SG-OTFT configuration produces a maximum A V of about 6.27. Significant improvements in propagation delay of 66% for diode-load and 53% for zero-V gs-load logic using DG-OTFT are obtained as compared with SG-OTFT.

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Channel length variation effect on performance parameters of organic field effect transistors

Cited by 98 publications

References 24 publications

Sulpho-Salicylic Acid Grafted to Ferrite Nanoparticles for n-Type Organic Semiconductors

Sulpho-Salicylic Acid Grafted to Ferrite Nanoparticles for n-Type Organic Semiconductors

Characterization and modeling of organic thin-film transistors based π-conjugated small molecule tetraphenyldibenzoperiflanthene: Effects of channel length

Analysis of static and dynamic performance of organic inverter circuits based on dual and single gate organic thin film transistors

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