Channel Profile Design of $\text{E}\delta $ DC MOSFET for High Intrinsic Gain and Low $V_{T}$ Mismatch

Investigation of geometrical and doping parameter variations on GaSb/Si‐based double gate tunnel FETs: A qualitative and quantitative approach for RF performance enhancement

“…Intrinsic variation with respect to drain doping (N d ) is shown in Figure B. It can be observed from the plot that for higher drain doping concentration, the intrinsic gain remains constant, and this is because of the screening phenomenon, the depletion width is found to be insensitive to higher doping concentration resulting in constant gain . DG TFET with gate‐drain overlap gives more intrinsic gain values compared with DG TFET, and this is due to higher R o values.…”

“…It can be observed from the plot that for higher drain doping concentration, the intrinsic gain remains constant, and this is because of the screening phenomenon, the depletion width is found to be insensitive to higher doping concentration resulting in constant gain. 28 DG TFET with gate-drain overlap gives more intrinsic gain values compared with DG TFET, and this Figure 10C depicts the variation of intrinsic gain against N s . From Figure 10C, it can be observed that intrinsic gain for DG TFET with gate-drain overlap are more sensitive to N s and hence offers high gain comparing DG TFET.…”

A Unified Model of Drain Current Local Variability due to Channel Length Fluctuation for an n-Channel EδDC MOS Transistor

“…An EδDC transistor is a device structure proposed by us which is reported to be a low-power, low-cost transistor, suitable for SoC applications with controlled process variability effects due to random discrete dopant effects [12], [13], [14], [15], [16], [17]. In the present work, we derive a physics based local drain current variability model of an epitaxial delta doped channel MOS (EδDC) transistor, caused due to random fluctuation of channel length, attributed to the LER/LWR phenomenon.…”

“…The last term in (16) is the correlation coefficient. The current sensitivities are calculated using (12) and (13). (17) here µ s represents the surface carrier mobility and v sat represents the saturation velocity of the inversion carriers.…”

A Unified Model of Drain Current Local Variability due to Channel Length Fluctuation for an n-channel Eδ DC MOS Transistor

“…An EδDC transistor is a device structure proposed by us which is reported to be a low-power, low-cost transistor, suitable for SoC applications with controlled process variability effects due to random discrete dopant effects [12], [13], [14], [15], [16], [17]. In the present work, we derive a physics based local drain current variability model of an epitaxial delta doped channel MOS (EδDC) transistor, caused due to random fluctuation of channel length, attributed to the LER/LWR phenomenon.…”