Channel Temperature Analysis of GaN HEMTs With Nonlinear Thermal Conductivity

Darwish, Ali; Bayba, Andrew J.; Hung, H. Alfred

doi:10.1109/ted.2015.2396035

Cited by 91 publications

(36 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand weak dependence of Z th (t) or R th for GaAs (no more than 10%) [19] and GaN (no more 6%) [20,21] transistors for V DS change was demonstrated. As reported in [22][23][24], the Z th (t) changes mainly follow dependence of thermal conductivity of GaN HEMT layers on temperature.…”

Section: Junction Forward Current;mentioning

confidence: 73%

Characterization of Self-Heating Process in GaN-Based HEMTs

et al. 2020

View full text Add to dashboard Cite

Thermal characterization of modern microwave power transistors such as high electron-mobility transistors based on gallium nitride (GaN-based HEMTs) is a critical challenge for the development of high-performance new generation wireless communication systems (LTE-A, 5G) and advanced radars (active electronically scanned array (AESA)). This is especially true for systems operating with variable-envelope signals where accurate determination of self-heating effects resulting from strong- and fast-changing power dissipated inside transistor is crucial. In this work, we have developed an advanced measurement system based on DeltaVGS method with implemented software enabling accurate determination of device channel temperature and thermal resistance. The methodology accounts for MIL-STD-750-3 standard but takes into account appropriate specific bias and timing conditions. Three types of GaN-based HEMTs were taken into consideration, namely commercially available GaN-on-SiC (CGH27015F and TGF2023-2-01) and GaN-on-Si (NPT2022) devices, as well as model GaN-on-GaN HEMT (T8). Their characteristics of thermal impedance, thermal time constants and thermal equivalent circuits were presented. Knowledge of thermal equivalent circuits and electro–thermal models can lead to improved design of GaN HEMT high-power amplifiers with account of instantaneous temperature variations for systems using variable-envelope signals. It can also expand their range of application.

show abstract

Section: Junction Forward Current;mentioning

confidence: 73%

Characterization of Self-Heating Process in GaN-Based HEMTs

et al. 2020

View full text Add to dashboard Cite

show abstract

“…The fitting parameter b has been modified to consider the complicated thermal behavior of such a high-power device. The dependence of thermal conductivity of the GaN HEMT on self-heating [23] is modeled indirectly by formulating the thermal resistance R th in terms of the gate voltage. The trappinginduced kink effect has been accounted for by the additional term I k in (9) to simulate the gate-and drain-pumping-induced kink effects [24].…”

Section: Large-signal Modelmentioning

confidence: 99%

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

Jarndal

Ghannouchi

2016

Solid-State Electronics

View full text Add to dashboard Cite

“…The k T 0 is the thermal conductivity at T0, which is 300 K here. The k T 0 is 208.7 and 282.3 while r is 1.3 and 1.2 for GaN and AlN, respectively (Bose, 2013;A. Darwish, Bayba, & Hung, 2015;Incropera, DeWitt, Bergman, & Lavine, 2006;Mion, Muth, Preble, & Hanser, 2006;Shackelford & Alexander, 2000;Strauch, 2011).…”

Section: Simulation Approachmentioning

confidence: 99%