Channel temperature measurement in hermetic packaged GaN HEMTs power switch using fast static and transient thermal methods

Chen, Szu Hao; Chou, Po Chien; Cheng, Stone

doi:10.1007/s10973-017-6275-7

Cited by 5 publications

(2 citation statements)

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“…In certain applications, fast response ability is demanded. Evaluation of the impact of the self‐heating effect on the transient characteristics of the GaN‐based HEMTs is required to improve device design and alleviate the degradation of devices, especially for E‐mode GaN‐based HEMTs, which show 10 times faster response times than the D‐mode GaN‐based HEMTs …”

Section: Resultsmentioning

confidence: 99%

“…Evaluation of the impact of the self-heating effect on the transient characteristics of the GaN-based HEMTs is required to improve device design and alleviate the degradation of devices, especially for E-mode GaN-based HEMTs, which show 10 times faster response times than the D-mode GaN-based HEMTs. [21][22][23][24] The frequency performance of the device is affected by the device temperature according to the formulas for the current-gain cutoff frequency ( f T ) and unilateral power gain cutoff frequency ( f max ) 19 :…”

Section: Device Descriptionmentioning

confidence: 99%

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Effects of dissipative substrate on the performances of enhancement mode AlInN/GaN HEMTs

Yan

Xie

Chen

et al. 2018

Int J Numerical Modelling

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AlInN/GaN high electron mobility transistors (HEMTs) exhibit numerous advantages compared to other known semiconductor devices. However, it is more difficult to realize the enhancement mode (E-mode) HEMTs of AlInN/ GaN than those of the AlGaN/GaN heterostructure, because of the higher 2-dimensional electron gas density at the AlInN/GaN interface. In this work, using simulations, it is shown that the E-mode can be achieved in AlInN/ GaN HEMTs by tuning the thickness of the AlInN barrier layer to less than 1.14 nm in our investigated structure. Based on the E-mode structure, the device performance stability of Al 0.83 In 0.17 N/GaN HEMTs with different heat dissipative substrates was evaluated to explore their effect on the suppression of the self-heating behavior. The DC behavior, device temperature, lattice temperature distribution, current cutoff frequency ( f T ), unilateral powergain-cutoff frequency ( f max ), and transient response were investigated comparatively. The results indicate that the AlInN/GaN HEMTs with a free-standing GaN substrate exhibit the best performance characteristics, ie, lowest lattice temperature, highest f T , and fastest transient response, in comparison with those using the flip-chip substrate and sapphire substrate. Our simulation results suggest that the free-standing GaN substrate can significantly improve the thermal stability and other basic performance characteristics of the E-mode AlInN/GaN HEMTs.

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Section: Resultsmentioning

confidence: 99%