Modeling of access resistances and channel temperature estimation for GaN HEMT

Islam, Shariful; Alim, Mohammad Abdul; Chowdhury, A. Zahed; Gaquière, Christophe

doi:10.1007/s10973-022-11371-y

Cited by 4 publications

(4 citation statements)

References 31 publications

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“…From the T max model expression, it can be found that the thermal resistance is mainly inversely proportional to the thermal conductivity of the material, and its proportional coefficient is mainly determined by the device's structure parameters. [ 51,55 ] Thus, T eq can be modeled as

T_{\text{eq}} = T_{0} &amp;#x00026;amp;amp;amp;amp;plus; \left(\right. R_{\text{sub }} &amp;#x00026;amp;amp;amp;amp;plus; R_{\text{GaN}} \left.\right) P_{\text{diss}}

where P diss is the power dissipation, and R GaN and R sub are the thermal resistance of the GaN buffer and substrate layers, respectively, which can be modeled as

$$R_{\text{GaN}} = \left(\alpha\right)_{\text{GaN }} \frac{1}{\left(\kappa\right)_{\text{GaN }} \left(\right.

…”

Section: Model Descriptionmentioning

confidence: 99%

“…Therefore, there is usually a certain distance from gate to source/drain (access region), which produces a nonlinear resistance. The resistance depends on the current I ds flowing through the access region, defined as [ 18,55 ]

$$R_{\text{d/s}} = R_{\text{d0/s0}} &amp;#x00026;amp;amp;amp;amp;plus; \frac{L_{\text{gd/s}}}{Q_{\text{acc,d/s}} \left(\mu\right)_{\text{acc,d/s}} \left(\left[\right. 1 - \left(\left(\right.

…”

Section: Model Descriptionmentioning

confidence: 99%

Section: Self-heating Effect (She)mentioning

confidence: 99%

Section: Access Resistancesmentioning

confidence: 99%

See 3 more Smart Citations

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Wu,

Yao,

Liu

et al. 2024

Physica Status Solidi (a)

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In this work, an extended temperature current–voltage (I–V) model for AlGaN/GaN high electron mobility transistors (HEMTs) is proposed. Since there is no carrier freeze‐out effect in GaN HEMTs, the current density, switching characteristics, and heat dissipation performance are significantly improved with the decrease in temperature. The threshold voltage drift phenomenon can be accurately described at various temperatures by the trapping effect control potential model. Based on Matthiessen's law, the applicable temperature range of the mobility model is further extended. At cryogenic temperatures, the saturation current, saturation velocity, and sub‐threshold swing of the device tend to saturate as well as be temperature‐independent, which can be accurately modeled by using the equivalent temperature and applying the crucial temperature to quantify the turning point. Furthermore, the SHE modeling incorporates the temperature dependence of the material's thermal conductivity. The accuracy of the model is verified by experimental data at low (4.2–300 K) and high (298–773 K) temperatures. The proposed model overcomes the limitations of existing models applied at wide ambient temperatures.

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T_{\text{eq}} = T_{0} &amp;#x00026;amp;amp;amp;amp;plus; \left(\right. R_{\text{sub }} &amp;#x00026;amp;amp;amp;amp;plus; R_{\text{GaN}} \left.\right) P_{\text{diss}}

where P diss is the power dissipation, and R GaN and R sub are the thermal resistance of the GaN buffer and substrate layers, respectively, which can be modeled as