Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

Chen, Chin Yi; Ameen, Tarek A.; Ilatikhameneh, Hesameddin; Rahman, Rajib; Klimeck, Gerhard; Appenzeller, Joerg

doi:10.1109/ted.2018.2862408

Cited by 16 publications

(10 citation statements)

References 40 publications

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“…The intriguing results obtained in this computational work can give new impulses to the design, simulation, and optimization of the advanced 2D materials-based nanoscale FETs with ultra-thin dielectrics, which have experienced significant progress [ 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 ]. In addition, the employment of such intriguing steep-slope nanodevices in advanced sensing applications [ 48 , 58 , 59 , 60 , 61 ] can be a matter for future works.…”

Section: Resultsmentioning

confidence: 99%

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

et al. 2022

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The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons. In this article, the performance of nanoscale junctionless carbon nanotube tunneling field-effect transistors (JL CNTTFETs) is greatly improved by using the synergy of electrostatic and chemical doping engineering. The computational investigation is conducted via a quantum simulation approach, which solves self-consistently the Poisson equation and the non-equilibrium Green’s function (NEGF) formalism in the ballistic limit. The proposed high-performance JL CNTTFET is endowed with a particular doping approach in the aim of shrinking the band-to-band tunneling (BTBT) window and dilating the direct source-to-drain tunneling window, while keeping the junctionless paradigm. The obtained improvements include the on-current, off-current, ambipolar behavior, leakage current, I60 metric, subthreshold swing, current ratio, intrinsic delay, and power-delay product. The scaling capability of the proposed design was also assessed, where greatly improved switching performance and sub-thermionic subthreshold swing were recorded by using JL CNTTFET with 5 nm gate length. Moreover, a ferroelectric-based gating approach was employed for more enhancements, where further improvements in terms of switching performance were recorded. The obtained results and the conducted quantum transport analyses indicate that the proposed improvement approach can be followed to improve similar cutting-edge ultrascaled junctionless tunnel field-effect transistors based on emerging atomically thin nanomaterials.

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Section: Resultsmentioning

confidence: 99%

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

et al. 2022

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“…More detailed analyses can be found in ref. . Figure c shows that the performance of the TFET operation can be improved with optimized device structure.…”

Section: Resultsmentioning

confidence: 99%

WSe₂ Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

Pang

Chen

Ameen

et al. 2019

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In this paper, electrostatically configurable 2D tungsten diselenide (WSe2) electronic devices are demonstrated. Utilizing a novel triple‐gate design, a WSe2 device is able to operate as a tunneling field‐effect transistor (TFET), a metal–oxide–semiconductor field‐effect transistor (MOSFET) as well as a diode, by electrostatically tuning the channel doping to the desired profile. The implementation of scaled gate dielectric and gate electrode spacing enables higher band‐to‐band tunneling transmission with the best observed subthreshold swing (SS) among all reported homojunction TFETs on 2D materials. Self‐consistent full‐band atomistic quantum transport simulations quantitatively agree with electrical measurements of both the MOSFET and TFET and suggest that scaling gate oxide below 3 nm is necessary to achieve sub‐60 mV dec−1 SS, while further improvement can be obtained by optimizing the spacers. Diode operation is also demonstrated with the best ideality factor of 1.5, owing to the enhanced electrostatic control compared to previous reports. This research sheds light on the potential of utilizing electrostatic doping scheme for low‐power electronics and opens a path toward novel designs of field programmable mixed analog/digital circuitry for reconfigurable computing.

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“…Hence, the Slater-Koster TB method in its original form cannot reproduce the dielectric constant of the material, and hence it is necessary to explicitly input a realistic value for ϵ in the Poisson equation. This is a standard technique in atomistic device simulations where the Poisson and Schrodinger/Green's functions are solved self-consistently [32][33][34] .…”

Section: Minmentioning

confidence: 99%

The sub-band structure of atomically sharp dopant profiles in silicon

et al. 2020

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The downscaling of silicon-based structures and proto-devices has now reached the single-atom scale, representing an important milestone for the development of a silicon-based quantum computer. One especially notable platform for atomic-scale device fabrication is the so-called Si:P δ-layer, consisting of an ultra-dense and sharp layer of dopants within a semiconductor host. Whilst several alternatives exist, it is on the Si:P platform that many quantum proto-devices have been successfully demonstrated. Motivated by this, both calculations and experiments have been dedicated to understanding the electronic structure of the Si:P δ-layer platform. In this work, we use high-resolution angle-resolved photoemission spectroscopy to reveal the structure of the electronic states which exist because of the high dopant density of the Si:P δ-layer. In contrast to published theoretical work, we resolve three distinct bands, the most occupied of which shows a large anisotropy and significant deviation from simple parabolic behaviour. We investigate the possible origins of this fine structure, and conclude that it is primarily a consequence of the dielectric constant being large (ca. double that of bulk Si). Incorporating this factor into tight-binding calculations leads to a major revision of band structure; specifically, the existence of a third band, the separation of the bands, and the departure from purely parabolic behaviour. This new understanding of the band structure has important implications for quantum proto-devices which are built on the Si:P δ-layer platform.

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Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

Cited by 16 publications

References 40 publications

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

WSe₂ Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

The sub-band structure of atomically sharp dopant profiles in silicon

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Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

Cited by 16 publications

References 40 publications

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

The sub-band structure of atomically sharp dopant profiles in silicon

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WSe₂ Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing