Channeled implantation of magnesium ions in gallium nitride for deep and low-damage doping

Nishimura, Tomoaki; Ikeda, K.; Kachi, Tetsu

doi:10.35848/1882-0786/ac039e

Cited by 10 publications

(12 citation statements)

References 32 publications

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“…Recently, Nishimura et al reported the advantages of channeled implantation and confirmed the activation of the GaN using Cathode luminescence. 15,16) In addition, Matys et al fabricated and characterized GaN field-limiting rings (FLR) termination structures using Mg channel implanted layer. 11) However, there have been only a few reports of channeled implantation of Mg ions to GaN.…”

Section: Introductionmentioning

confidence: 99%

“…11) However, there have been only a few reports of channeled implantation of Mg ions to GaN. 11,[15][16][17] So far, we have evaluated the defects of GaN on sapphire induced by Mg random implantation using transmission electron microscopy (TEM), Raman spectroscopy and atomic force microscopy (AFM), 18) but the defects of Mg channel implanted layers have not been evaluated fully. In this work, we confirmed the activation of Mg and evaluated Mg channel implanted layers.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of magnesium channeled implantation layers in GaN(0001)

Suyama

Kawanowa

Minagawa

et al. 2023

Jpn. J. Appl. Phys.

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The effect of Mg channeled implantation into epitaxially grown gallium nitride (GaN) was studied using Hall-effect measurements, photoluminescence (PL), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and Rutherford backscattering spectroscopy (RBS). In the channeled implantation, deeper profiles were obtained with lower implantation energy and less damage compared to random implantation. P-type conduction of Mg channel implanted layer was confirmed electrically and optically when the ion dose and implantation energy are 1 × 1014 cm−2 and 20 keV, respectively. However, even with channeled implantation, several types of defects including point defects and oblong defects as seen in the random implantation were observed by TEM/STEM analysis. In addition, RBS analysis showed slightly worse crystal qualities in channeled implantation compared to non-implanted samples. Mg channeled implantation is useful to achieve deeper profiles (> 1 µm), but further condition tuning of process will be necessary for practical application.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characterization of magnesium channeled implantation layers in GaN(0001)

Suyama

Kawanowa

Minagawa

et al. 2023

Jpn. J. Appl. Phys.

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“…Ion beam irradiation is one of the promising and practical methods that can introduce defects and impurities into a material quantitatively and reproducibly [12,13]. For example, Ochedowski et al irradiated U ions as swift heavy ions to monolayer (1L)-graphene and molybdenum disulfide (MoS2) at different doses and investigated their effects on electrical properties [14].…”

Section: Introductionmentioning

confidence: 99%

Changing the structural and electronic properties of graphene and related two-dimensional materials using ion beam irradiation with NaCl sacrificial layers

et al. 2022

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The most appropriate material for a sacrificial (protection) layer to effectively stop an irradiated ion in 2D materials supported on the surface of a SiO 2 substrate was explored for changing the structure, electronic properties, and chemical activities of 2D materials by ion-implantation. We found that a NaCl protection layer covered by a Cr layer is the most suitable sacrificial layers for graphene, MoS 2 , and TaS 2 based on Raman spectroscopy and electron transport properties. The gate voltage dependence of the conductivity (resistivity) shows that irradiating graphene with B and N ions at 200 keV with a dose of 10 13 cm −2 using a Cr or NaCl sacrificial layer, introduces hole and electron carriers, respectively. Both the B and N atoms introduced by ion beam irradiation cause strain in the graphene lattice, resulting in it partially detaching from the substrate like quasi-freestanding graphene. Irradiation with B ions creates neutral impurities in graphene, producing stronger carrier scattering in the Raman scattering, and irradiation with N ions creates charged impurities which affect electron transport phenomena, respectively. The developed sacrificial layers are promising for the defect engineering of 2D materials.

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“…As a non-UHPA approach, various Mg I/I techniques, such as channeling, high-temperature, and vacancy-guided implantation techniques, have been reported to suppress the introduction of defects. [17][18][19][20] However, as long as ions are implanted, annealing at temperatures lower than 1300 °C does not completely repair defects, and it seems difficult to fully activate Mg without UHPA. Thus, it is valuable to investigate Mg doping methods without Mg I/I.…”

mentioning

confidence: 99%

Substitutional diffusion of Mg into GaN from GaN/Mg mixture

Itoh¹,

Lu²,

Watanabe³

et al. 2022

Appl. Phys. Express

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We evaluated Mg diffusion into GaN from GaN/Mg mixture. The diffusion depth of Mg increased with diffusion temperature from 1100 °C to 1300 °C, whereas the Mg concentration remained constant at 2–3×10^18 cm^-3 independent of temperature. The estimated activation energy for Mg diffusion was 2.8 eV, from which the substitutional diffusion mechanism was predicted. Mg-diffused GaN samples showed p-type conductivity with a maximum hole mobility of 27.7 cm^2V^-1s^-1, suggesting that substitutional diffusion contributes to Mg activation. This diffusion technique can be used to easily form p-type GaN and has potential as a p-type selective doping technique.

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Channeled implantation of magnesium ions in gallium nitride for deep and low-damage doping

Cited by 10 publications

References 32 publications

Characterization of magnesium channeled implantation layers in GaN(0001)

Characterization of magnesium channeled implantation layers in GaN(0001)

Changing the structural and electronic properties of graphene and related two-dimensional materials using ion beam irradiation with NaCl sacrificial layers

Substitutional diffusion of Mg into GaN from GaN/Mg mixture

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