Channeling control for large tilt angle implantation in Si 〈100〉

Simonton, Robert B.; Kamenitsa, D.; Ray, A.; Park, Changhae; Klein, K.; Tasch, A.F.

doi:10.1016/0168-583x(91)96132-5

Cited by 11 publications

(4 citation statements)

References 3 publications

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“…Also, for a given tilt angle, the junction depth is maximum at 0 ~ rotation and monotonically decreases as the rotation angle increases. Although the effect of {400} planar channeling was demonstrated in other studies (11) of high energy implants (-> 100 keV), it does not appear to have significant effect on the profiles in the range of implant conditions used in this study. Based on the contours of actual ion beam incident angles and junction depth, tilt angles in the range of 8-10 ~ and rotation angles in the range of 30-60 ~ appear to be the optimum combination of implant angles for minimizing channeling in large diameter wafers for the range of implant conditions studied in this work.…”

Section: Comparison Of Calculations With Experimentalcontrasting

confidence: 67%

“…Because spin coating involves simultaneous flow and drying, with concentration-dependent film properties that change by orders of magnitude during the process, a complete theoretical description of even the flat surface problem is still the subject of current research (2,(5)(6)(7)(8)(9)(10)(11). The problem is compounded with the addition of a complex surface topography.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Critical Angles for Channeling of Boron Ions Implanted into Single‐Crystal Silicon

Park¹,

Klein²,

Tasch³

et al. 1991

J. Electrochem. Soc.

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A substantially improved estimate of the critical angles for boron ion channeling in single-crystal silicon is reported. The ZBL Si-B specifictnteratomic potential has been used for the critical angle calculations because the universal potentials significantly overestimate the potential at larger interatomic separations. The new results are of significant importance in that they indicate that the critical angles are much smaller than the previously reported results which were based on the Thomas-Fermi potential. These new results are well supported by experimental observations of the distributions of boron implanted into single-crystal silicon.

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Section: Comparison Of Calculations With Experimentalcontrasting

confidence: 67%

Section: Discussionmentioning

confidence: 99%

Critical Angles for Channeling of Boron Ions Implanted into Single‐Crystal Silicon

Park¹,

Klein²,

Tasch³

et al. 1991

J. Electrochem. Soc.

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show abstract

“…The simulations were carried out for incidence angles of 0, 20, 30, 45, 65, 72, 75, 83, and 85° with respect to the surface normal. These angles were selected to cover a good sample in the 0–85° range, including angles of specific interest, such as 72° and 83° which represent a channelling angle for Si(100) [ 56 ] and a grazing incidence angle, respectively, frequently used in TEM lamellae preparation [ 57 ]. A visualization of a set of simulations can be seen in Figure 3 and the global parameters of the simulations can be seen in the Table 1 .…”

Section: Methodsmentioning

confidence: 99%

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

Defoort-Levkov¹,

Bahm²,

Philipp³

2022

Beilstein J. Nanotechnol.

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Focused ion beams (FIB) are a common tool in nanotechnology for surface analysis, sample preparation for electron microscopy and atom probe tomography, surface patterning, nanolithography, nanomachining, and nanoprinting. For many of these applications, a precise control of ion-beam-induced processes is essential. The effect of contaminations on these processes has not been thoroughly explored but can often be substantial, especially for ultralow impact energies in the sub-keV range. In this paper we investigate by molecular dynamics (MD) simulations how one of the most commonly found residual contaminations in vacuum chambers (i.e., water adsorbed on a silicon surface) influences sputtering by 100 eV argon ions. The incidence angle was changed from normal incidence to close to grazing incidence. For the simulation conditions used in this work, the adsorption of water favours the formation of defects in silicon by mixing hydrogen and oxygen atoms into the substrate. The sputtering yield of silicon is not significantly changed by the contamination, but the fraction of hydrogen and oxygen atoms that is sputtered largely depends on the incidence angle. This fraction is the largest for incidence angles between 70 and 80° defined with respect to the sample surface. Overall, it changes from 25% to 65%.

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“…The simulations were carried out for incidence angles of 0, 20, 30, 45, 65, 72, 75, 83, and 85° with respect to the surface normal. These angles were selected to cover a good sample in the 0-85° range, including angles of specific interest, such as 72° and 83° which represent a channelling angle for Si(100) [56] and a grazing incidence angle, respectively, frequently used in TEM lamellae preparation [57]. A visualization of a set of simulations can be seen in Figure 3 and the global parameters of the simulations can be seen in the Table 1.…”

Section: Molecular Dynamics Simulationsmentioning

confidence: 99%

Influence of water contamination on the sputtering of silicon with low energy argon ions investigated by Molecular Dynamics simulations.

Defoort-Levkov¹,

Bahm²,

Philipp³

2022

Preprint

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Focused ion beams (FIB) are a common tool in nanotechnology for surface analysis, sample preparation for electron microscopy and atom probe tomography, surface patterning, nanolithography, nanomachining and nanoprinting. For many of these applications, a precise control of the ion-beam induced processes is essential. The effect of contaminations on these processes has not been explored thoroughly but can often be substantial, especially for ultralow impact energies in the sub-keV range. In this paper we investigate by molecular dynamics (MD) simulations how one of the most commonly found residual contaminations in vacuum chambers, i.e. water, adsorbed on a silicon surface, influences sputtering by 100 eV argon ions. The incidence angle was changed from normal incidence close to grazing incidence. For the simulation conditions used in this work, the adsorption of water favours the formation of defects in silicon by mixing of the hydrogen and oxygen atoms into the substrate. The sputtering yield of silicon is not changed significantly by the contamination, but the fraction of hydrogen and oxygen atoms that is sputtered depends largely on the incidence angle. This fraction is largest for incidence angles between 70 and 80 degrees defined with respect to the sample surface. Overall, it changes from 25% to 65%.

show abstract

Channeling control for large tilt angle implantation in Si 〈100〉

Cited by 11 publications

References 3 publications

Critical Angles for Channeling of Boron Ions Implanted into Single‐Crystal Silicon

Critical Angles for Channeling of Boron Ions Implanted into Single‐Crystal Silicon

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

Influence of water contamination on the sputtering of silicon with low energy argon ions investigated by Molecular Dynamics simulations.

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