Chapter 1 Interlayer exchange coupling in layered magnetic structures

Bürgler, Daniel E.; Grünberg, P.; Demokritov, S. O.; Johnson, M.T.

doi:10.1016/s1567-2719(01)13005-2

Cited by 30 publications

(30 citation statements)

References 222 publications

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“…For both cases, there is no sharp maximum for the total coupling strength J = J 1 + J 2 but an almost constant value of ͉J͉ of the order of 1 mJ/ m 2 . This value is well comparable to those typically found for fully metallic systems 29 but is clearly smaller than the 6 mJ/ m 2 observed for MBE-grown Fe/ Si/ Fe͑001͒ trilayers. 30 We relate the reduced coupling strength compared to MBE samples to intermixing at the Fe/ Si interface due to the higher energy of the incident particles during the sputtering process.…”

Section: Fe/ Si/ Fe Trilayerssupporting

confidence: 84%

Magnetic properties of Fe films and Fe∕Si∕Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

Damm

Büchmeier

Schindler

et al. 2006

Journal of Applied Physics

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We grow monocrystalline Fe͑001͒ films and Fe/ Si/ Fe͑001͒ trilayers by ion-beam sputter epitaxy on GaAs͑001͒ and MgO͑001͒ substrates. Ion-beam sputtering parameters such as substrate presputtering time, substrate temperature, beam voltage, and target angle are optimized for 10-nm-thick Fe͑001͒ films with respect to epitaxial growth and magnetic properties. In situ low-energy electron diffraction patterns confirm the epitaxial and monocrystalline nature of the sputtered films, surprisingly even on untreated and thus oxidized substrates. The magneto-optical Kerr effect and ferromagnetic resonance are employed to investigate the magnetic properties, and the structural properties are characterized by atomic force microscopy and x-ray reflectivity measurements. Using the optimized set of parameters that yields the best magnetic properties for single Fe films on GaAs, we deposit epitaxial Fe/ Si/ Fe͑001͒ structures and observe antiferromagnetic interlayer exchange coupling for epitaxially sputtered Fe/ Si/ Fe͑001͒ trilayers on GaAs͑001͒. The total coupling strength reaches values of up to 2 mJ/ m 2 at a Si thickness of 15 Å.

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Section: Fe/ Si/ Fe Trilayerssupporting

confidence: 84%

Magnetic properties of Fe films and Fe∕Si∕Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

Damm

Büchmeier

Schindler

et al. 2006

Journal of Applied Physics

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“…Using the equations given in Refs. 55 and 56, taking into account a nearly normal incidence ͓sin͑͒ Ͻ Ͻ1͔, and neglecting terms proportional to 2 , as well as even in magnetization and linear in terms in the magnetic part of the nonlinear optical susceptibility appearing for pp and sp combinations of polarizations, it is straightforward to extract the contributions to SHG from one interface ͑or surface͒ for different polarization combinations, which are listed in Table I.…”

Section: Modelingmentioning

confidence: 99%

“…Here we consider the situation of a monodomain structure, with magnetic states in the field +H and −H being transformed into each other by the time reversal operation ͑m 1 → −m 1 , m 2 → −m 2 ͒. For modeling this situation it is sufficient to define the SHG in different phases realized in this geometry at ͑i͒ H =0 ͑antiferromagnetic m 1 ↑ ↓m 2 …”

Section: B Magnetization Reversal Along Hard Axismentioning

confidence: 99%

“…A compilation of the main results up to now can be found in a number of comprehensive reviews. [2][3][4] It was established, for example, that the parameters defining the actual magnetic state of the coupled system such as the interlayer exchange coupling strength, the saturation magnetizations of the layers, as well as the magnetic anisotropy can vary in wide limits and are governed by an appropriate choice of growth conditions. In particular, the strength of the bilinear exchange interaction J 1 ͑E bl =−J 1 M 1 M 2 , where M i is a unit vector along the magnetization direction of layer i, M i ͒ can be positive or negative depending on the thickness of the intermediate layer.…”

Section: Introductionmentioning

confidence: 99%

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Interfacial magnetization in exchange-coupledFe∕Cr∕Festructures investigated by second harmonic generation

et al. 2007

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We have studied the magnetic field dependences of magnetic optical second harmonic generation ͑SHG͒ in MBE-grown Fe/ Cr/ Fe/ Ag/ GaAs͑100͒ heterostructures displaying both bilinear and biquadratic interlayer exchange coupling. The magnetic field H was applied in the ͑100͒ surface plane along both easy ͓͑001͔͒ and hard ͓͑110͔͒ axes of the in-plane fourfold magnetic anisotropy. The SHG has been measured in reflection at near normal incidence for different polarization combinations ͑pp , ps , ss , sp͒ of the fundamental and second harmonic light in longitudinal and transversal geometries. The magnetic field variation of the SHG signal clearly reflects the field-induced transformations of the magnetic state at the interfaces in the trilayer. It strongly depends on the configuration of light polarization, experimental geometry ͑longitudinal or transversal͒, and orientation of the magnetic field H relative to the crystal axes. In contrast to linear magneto-optical Kerr effect, which is odd in magnetic field, magnetic SHG is either even in H or does not display a definite parity at all, depending on the polarization configuration. We interpret the data based on a model accounting for nonmagnetic and magnetic contributions to SHG from the surface and interfaces described by C 4v point symmetry. Taking into account the changes of the mutual orientation of interfacial magnetizations allows us to describe the general features of the measured field dependences of SHG.

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“…This can in principle be achieved experimentally by exchange coupling the semiconducting ferromagnet to an antiferromagnet, 5 as is succesfully applied for metallic structures, 6 or, alternatively, by exchange coupling two magnetic semiconductor layers, separated by a nonmagnetic semiconductor layer. In contrast to metallic ferromagnets, where the interlayer exchange coupling is well-studied 7 and theoretically understood within the Ruderman, Kittel, Kasuya, and Yosida (RKKY) or a quantum interference model, 8,9 little is known about interlayer coupling between two ferromagnetic semiconductors across a nonmagnetic semiconductor where the carrier concentration is too low to support the RKKY mechanism. 10,11 Therefore the study of the magnetic interlayer coupling in allsemiconductor structures may not only be technologically relevant, 1 but is also of fundamental interest.…”

Section: Introductionmentioning

confidence: 99%

Antiferromagnetic interlayer exchange coupling in all-semiconductingEuS∕PbS∕EuStrilayers

et al. 2004

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. A comprehensive experimental study on the antiferromagnetic interlayer exchange coupling in high quality epitaxial all-semiconducting EuS/ PbS/ EuS trilayers is reported. The influence of substrates, of the thickness of the nonmagnetic PbS spacer layer, and of temperature was investigated by means of SQUID magnetometry. In trilayers with a PbS thickness between 4 and 12 Å the low temperature hysteresis loops showed the signature of antiferromagnetic coupling. The value of the interlayer exchange coupling energy was determined by simulating the data based on a Stoner-Wohlfarth model. An important observation was that the interlayer exchange coupling energy varies strongly with temperature, consistent with a power-law dependence of the exchange coupling constant on the saturation magnetization of the EuS layers. While no theoretical description is readily available, we conjecture that the observed behavior is due to a dependence of the interlayer exchange coupling energy on the exchange splitting of the EuS bands.

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Chapter 1 Interlayer exchange coupling in layered magnetic structures

Cited by 30 publications

References 222 publications

Magnetic properties of Fe films and Fe∕Si∕Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

Magnetic properties of Fe films and Fe∕Si∕Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

Interfacial magnetization in exchange-coupledFe∕Cr∕Festructures investigated by second harmonic generation

Antiferromagnetic interlayer exchange coupling in all-semiconductingEuS∕PbS∕EuStrilayers

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