Chapter 4 OMVPE Growth of AlGalnP for High-Efficiency Visible Light-Emitting Diodes

Chen, C.H.; Stockman, S. A.; Peanasky, M. J.; Kuo, C. P.

doi:10.1016/s0080-8784(08)62405-9

Cited by 14 publications

(9 citation statements)

References 103 publications

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“…Using these assumptions, the isoeffi ciency curves in Figure 13.5 indicate a maximum effi ciency of about 43% at 500 × . Using analytical expressions to calculate bandgap energies as a function of lattice constant [10,11] , the ranges of several alloys with lattice mismatch below 1% are indicated. Though they are by no means defi nitive of what is possible, signifi cant excursions from these alloy compositions will be challenging at best.…”

Section: Efficiency Under Am 15mentioning

confidence: 99%

High‐Concentration, III–V Multijunction Solar Cells

Kinsey¹

2010

Solar Cells and Their Applications

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Section: Efficiency Under Am 15mentioning

confidence: 99%

High‐Concentration, III–V Multijunction Solar Cells

Kinsey¹

2010

Solar Cells and Their Applications

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“…It is found that AlGaInP compounds have relatively good p-type properties. For example, the carrier concentration of p-GaP could easily reach 5 Â 10 18 cm À 3 [7,8]. In recent years, high performance AlGaInP compounds optoelectronic devices have been successfully fabricated [9,10].…”

Section: Introductionmentioning

confidence: 99%

GaP:Mg layers grown on GaN by MOCVD

Fan

et al. 2010

Journal of Crystal Growth

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“…Increasing the growth temperature is again effective in suppressing oxygen incorporation. However, due to In re-evaporation very high temperatures are not ideal for In-containing alloys, thus making the optimal temperature window for AlGaInP quite narrow [64]. High temperatures are also chosen for other reasons discussed in the section on ordering.…”

Section: Puritymentioning

confidence: 99%

“…Oxygen incorporation is also influenced by the phosphorus overpressure during growth, with high V/III ratios minimizing oxygen incorporation [64]. However, the use of high PH 3 flows leads to heavy loading of excess phosphorus in the reactor exhaust and associated disposal problems.…”

Section: Puritymentioning

confidence: 99%

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Epitaxy of High-Power Diode Laser Structures

Weyers

Bhattacharya

Bugge

et al.

Topics in Applied Physics

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Abstract. Excellent semiconductor-material quality is an essential prerequisite for the fabrication of high-power diode lasers and laser bars. This review discusses issues in the epitaxial growth of semiconductor materials and layer sequences that form the basis for diode lasers. First, an overview of the material systems used for diode lasers with emission wavelengths extending from the far-infrared to the blue range of the spectrum is presented. The following sections then concentrate on materials that have, until now, been used for high-power diode lasers: the GaAs-based, and to a lesser extent also the InP-based members of the III-V family (Al, Ga, In)(As, P). Different growth techniques are described, with stress on the two modern methods -Molecular-Beam Epitaxy (MBE) and Metalorganic Vapor-Phase Epitaxy (MOVPE) -that are currently used for the growth of diode-laser structures. An attempt is made to compare the relative strengths and weaknesses of these epitaxial growth techniques.The issues of purity, ordering (observed for example in GaInP), phase separation (occurring for certain compositions of GaInAsP) and p-and n-type doping for the constituent III-V materials found in high-power diode lasers are discussed in detail. The sequential growth of layers of controlled thicknesses, composition and doping profiles to build up the desired heterostructures requires careful optimization of the growth processes, especially at the heterointerfaces. While most of the layers within the heterostructure are lattice-matched to the underlying substrate, the active, light-emitting layer usually consists of one or more strained quantum wells (QWs). The advantages of such strained layers along with the corresponding implications from the growth viewpoint are highlighted. Finally, an overview of the different material combinations used and the state-of-the-art for 600-1060 nm emitting GaAs-based diode lasers is presented.The first reports on semiconductor-diode lasers [1] date back to 1962. Since then these devices have been realized over a wide range of emission wavelengths in a variety of material systems. Since the first demonstration of the semiconductor laser, threshold-current densities have fallen by more than three orders of magnitude, due to various breakthroughs made possible primarily by advancements in crystal-growth technologies. Improvements in Liquid-Phase Epitaxy (LPE) in the early 1970s enabled the realization of the Double Heterostructure (DH) concept and Continuous-Wave (CW) operation of GaAs/AlGaAs lasers, while progress in growth technologies like MolecularBeam Epitaxy (MBE) and Metalorganic Vapor-Phase Epitaxy (MOVPE) were responsible for the development of quantum-well lasers, which are the basis of most high-power diode lasers today. This review describes and compares the different epitaxial growth methods used to fabricate diode lasers in various material systems and examines important growth-related issues such as doping, ordering and homogeneity that are essential for the successful fabrication of ...

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Chapter 4 OMVPE Growth of AlGalnP for High-Efficiency Visible Light-Emitting Diodes

Cited by 14 publications

References 103 publications

High‐Concentration, III–V Multijunction Solar Cells

High‐Concentration, III–V Multijunction Solar Cells

GaP:Mg layers grown on GaN by MOCVD

Epitaxy of High-Power Diode Laser Structures

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