Chapter 4 Optical Properties of Semiconductors under Pressure

Goñi, A. R.; Syassen, K.

doi:10.1016/s0080-8784(08)60232-x

Cited by 74 publications

(59 citation statements)

References 429 publications

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“…This feature can be understood by considering the effect of a hydrostatic compressive stress on the , X, and L conduction band minima. The directband gap and indirect L-band gap both blueshift with increasing pressure, whereas the indirect X-gap decreases with increasing pressure [59]. Hence, the observed redshift unambiguously proves that the PL peak involves X-type conduction states in good correlation with TB calculations.…”

Section: B Effect Of the Hydrostatic Pressuresupporting

confidence: 69%

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

et al. 2016

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publicationCitation for published version (APA): Robert, C., Pereira Da Silva, K., Nestoklon, M. O., Alonso, M. I., Turban, P., Jancu, J-M., ... Cornet, C. (2016). Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots. Physical Review B, 94(7), 1-11. [075445]. DOI: 10.1103/PhysRevB.94.075445 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We study the complex electronic band structure of low In content InGaAs/GaP quantum dots. A supercell extended-basis tight-binding model is used to simulate the electronic and the optical properties of a pure GaAs/GaP quantum dot modeled at the atomic level. Transitions between hole states confined into the dots and several X Z -like electronic states confined by the strain field in the GaP barrier are found to play the main role on the optical properties. Especially, the calculated radiative lifetime for such indirect transitions is in good agreement with the photoluminescence decay time measured in time-resolved photoluminescence in the µs range. Photoluminescence experiments under hydrostatic pressure are also presented. The redshift of the photoluminescence spectrum with pressure is also in good agreement with the nature of the electronic confined states simulated with the tight-binding model.

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Section: B Effect Of the Hydrostatic Pressuresupporting

confidence: 69%

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

et al. 2016

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“…Optical reflectivity spectra of MgB 2 in the energy range 0.6-4.0 eV were measured using a micro-optical setup described in Ref. [47]. Pressures were measured by the ruby luminescence method [48,49].…”

Section: Experiments a Experimental Detailsmentioning

confidence: 99%

MgB₂under pressure: phonon calculations, Raman spectroscopy, and optical reflectance

Kunc¹,

Loa²,

Syassen

et al. 2001

J. Phys.: Condens. Matter

128

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The effect of pressure on optical phonon frequencies of MgB2 has been calculated using the frozenphonon approach based on a pseudopotential method. Grüneisen parameters of the harmonic mode frequencies are reported for the high-frequency zone-center E2g and B1g and the zone-boundary E2u and B2u modes at A. Anharmonic effects of phonon frequencies and the implications of the calculated phonon frequency shifts for the pressure dependence of the superconducting transition temperature of MgB2 are discussed. Also reported are Raman and optical reflectance spectra of MgB2 measured at high pressures. The experimental observations in combination with calculated results indicate that broad spectral features we observed in the Raman spectra at frequencies between 500 and 900 cm −1 cannot be attributed to first-order scattering by zone-center modes, but originate in part from a chemical species other than MgB2 at the sample surface and in part from a maximum in the MgB2 phonon density of states. Low-temperature Raman spectra taken at ambient pressure showed increased scattering intensity in the region below 300 cm −1 .

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“…With increasing pressure all observed peaks shift to higher energies, which is a clear indication that the observed transitions are direct in k -space and occur at the Brillouin zone center [9]. At 3.1 GPa a ninth peak appears on the high energy side of the QD emission band.…”

Section: Introductionmentioning

confidence: 78%

“…The solid black lines depict the pressure dependence of the direct Γ -Γ and indirect X-Γ band gap of bulk GaAs taken from Ref. [9]. All QD ground state transitions shift to higher energies with increasing pressure, slightly diverging, i.e.…”

Section: Introductionmentioning

confidence: 99%

Dependence of the band‐gap pressure coefficients of self‐assembled InAs/GaAs quantum dots on the quantum dot size

Kristukat

Goñi

Pötschke

et al. 2006

Physica Status Solidi (b)

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We report on low-temperature photoluminescence experiments on self-assembled InAs/GaAs quantum dots under high hydrostatic pressure up to 8 GPa using a diamond anvil cell. The sample exhibits a multimodal size distribution of the quantum dots, which gives rise to a characteristic emission profile displaying up to nine clearly separable peaks attributed to the ground-state recombination from each quantum dot subensemble with different size. Structural analysis revealed that their size differs in entire monolayer steps. The measured pressure coefficients for each subensemble show a linear dependence on their zeropressure emission energy ranging from 65 meV/GPa for the largest dots to 112 meV/GPa for the smallest ones. Pressure dependent strain simulations based on an atomistic valence-force field yield that the pressure coefficient of the InAs band-gap is strongly reduced when InAs is embedded in a GaAs matrix. Taking into account confinement effects within the envelope function approximation, the calculated pressure coefficients are in good agreement with the experimental findings.

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Chapter 4 Optical Properties of Semiconductors under Pressure

Cited by 74 publications

References 429 publications

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

MgB₂under pressure: phonon calculations, Raman spectroscopy, and optical reflectance

Dependence of the band‐gap pressure coefficients of self‐assembled InAs/GaAs quantum dots on the quantum dot size

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Chapter 4 Optical Properties of Semiconductors under Pressure

Cited by 74 publications

References 429 publications

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

MgB2under pressure: phonon calculations, Raman spectroscopy, and optical reflectance

Dependence of the band‐gap pressure coefficients of self‐assembled InAs/GaAs quantum dots on the quantum dot size

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MgB₂under pressure: phonon calculations, Raman spectroscopy, and optical reflectance