Chapter 5 Multilayer dielectrics for memory applications

Gentil, P.

doi:10.1016/s1874-5903(99)80011-1

Cited by 3 publications

(3 citation statements)

References 94 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Frenkel Poole (FP) conduction is considered the primary source of charge transfer with fields applied across SiO 2 and Si 3 N 4 films over 10 nm [5,59] Charge traps can be generated in SiO 2 under thermally assisted electric fields of 1.5 MV/cm [65,66] . The hot carrier electrons injected into the oxide are capable of releasing hydrogen from defect locations near the anode surface when the electron energy is 2eV or greater.…”

Section: Corona Chargingmentioning

confidence: 99%

“…Annealing samples in the temperature range of 200°C to 300°C releases the hydrogen from Si and N bonds in silicon nitride leaving them as susceptible trapping locations [5].…”

Section: Corona Chargingmentioning

confidence: 99%

“…The electret provides an apparent potential at its surface, referred to as the effective surface voltage (ESV). Thin film electrets have produced some revolutionary devices such as the electret microphone and nonvolatile memory which remain functional for decades [4][5][6]. Traditionally, field effect transistor (FET) microphones, also known as electret condenser microphones (ECMs), are made with an electret consisting of a Mylar or Polytetrafluoroethylene (PTFE) [3,7,8].…”

mentioning

confidence: 99%

See 2 more Smart Citations

Multilayer electret activated by direct contact silicon electrode.

Crain

View full text Add to dashboard Cite

DEDICATIONThis dissertation is dedicated to my family Angie, Wyatt, and Andrew. iv ACKNOWLEDGMENTS I would like to thank Dr. Keynton for his mentorship. He has been a great role model for me and countless other students. I appreciate the time and effort that he has put into teaching me how to do research. I would also like to thank Dr.McNamara for his enthusiasm and helpful discussions. From Dr. Cohn, I learned perspective and I appreciate his high quality workmanship. He is a fantastic writer.Dr. Alphenaar is a great teacher, I had been in the microfab business for several years before taking physical electronics in ECE; I was very happy to learn it from him. From Dr. Gamini, I learned to take things in stride; work smart, keep cool; in other words, behave like a physicist. A special "Thank You" to Dr. Depuy for all of the guidance and consultation which has resulted in my learning a great deal about DOE and statistical interpretation of results. A second special "Thank You" to Dr.

show abstract

Section: Corona Chargingmentioning

confidence: 99%

“…Annealing samples in the temperature range of 200°C to 300°C releases the hydrogen from Si and N bonds in silicon nitride leaving them as susceptible trapping locations [5].…”

Section: Corona Chargingmentioning

confidence: 99%