Chapter 6 Photovoltaic Infrared Detectors

Reine, M. B.; Sood, Ashok K.; Tredwell, T.J.

doi:10.1016/s0080-8784(08)62766-0

Cited by 82 publications

(63 citation statements)

References 125 publications

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“…In the following, when we refer to Auger recombination, it is to be understood that we are referring to the Auger 1 mechanism. 11 The amount of recombination that occurs radiatively, as a fraction of the total (radiative plus nonradiative) recombination, is related to the radiative and net nonradiative lifetimes by (6) where R is a recombination rate, τ is a lifetime; and N D is the donor concentration. Subscript Rad indicates radiative; Tot indicates total, which is the sum of radiative and nonradiative processes; and NR indicates nonradiative.…”

Section: Discussionmentioning

confidence: 99%

“…Equations 2 and 3 follow the notation and variable definitions of Reine et al 11 The radiative Spectral Crosstalk by Radiative Recombination in Sequential-Mode, Dual Mid-Wavelength Infrared Band HgCdTe Detectors 521 coefficient, B, depends on the temperature and local composition, while the SRH trap energy was taken to be at the local, intrinsic Fermi level. The optical absorption coefficient was calculated using the composition-and temperature-dependent expressions of Hougen.…”

Section: Device Modelingmentioning

confidence: 99%

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Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band HgCdTe detectors

Coussa

Gallagher

Kosai

et al. 2004

Journal of Elec Materi

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For small pixel, infrared (IR) focal plane arrays (FPAs), Raytheon Vision Systems' architecture for integrated, dual-band detectors uses the sequential mode of the n-p ϩ -n configuration. There is a single indium bump per pixel, leaving the p ϩ layer floating, and the operating polarity of the bias selects the spectral sensitivity by reverse-biasing the active p-n junction. Photogenerated minority carriers in the absorber layer of the forward-biased inactive photodiode are lost through recombination. This paper is the first report of a new optical crosstalk mechanism that occurs in sequential-mode, dual-band detectors. In the long-wavelength mode under out-of-band, short-wavelength illumination, radiative recombination yields emission near the bandgap energy of the shortwavelength absorber layer, resulting in a spurious short-wavelength response that appears as spectral crosstalk. We present experimental and device modeling results on the spectral crosstalk in molecular-beam-epitaxy-grown HgCdTe arrays with the cutoff wavelength of both bands in the 4-5-µm range.

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Section: Discussionmentioning

confidence: 99%

Section: Device Modelingmentioning

confidence: 99%

Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band HgCdTe detectors

Coussa

Gallagher

Kosai

et al. 2004

Journal of Elec Materi

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“…The R 0 A increases when the temperature is lowered, with at first a variation law roughly proportional to exp(E g /kT) where E g is the energy gap of the GaInAsSb absorbing layer (0.58 eV). This indicates that the dark current is diffusion controlled at relatively high temperatures [16]. At low temperatures, the R 0 A product slowly changes with T, suggesting the dark current is then controlled by tunneling mechanisms or surface leakage [16].…”

Section: Methodsmentioning

confidence: 99%

“…This indicates that the dark current is diffusion controlled at relatively high temperatures [16]. At low temperatures, the R 0 A product slowly changes with T, suggesting the dark current is then controlled by tunneling mechanisms or surface leakage [16].…”

Section: Methodsmentioning

confidence: 99%

Surface passivation of GaInAsSb photodiodes with thioacetamide

Salesse

Joullié²,

Calas

et al. 2007

Phys. Status Solidi (c)

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AlGaAsSb/GaInAsSb heterojunction mesa photodiodes having 2.2 µm cutoff wavelength, grown by MBE on (p) GaSb substrates, have been passivated using thioacetamide CH 4 CSNH 2 and ammonium sulphide (NH 4 ) 2 S. Superior characteristics were obtained from devices processed with thioacetamide in acid medium (pH = 2.4). At room temperature the surface leakage currents were suppressed, and the photodiodes showed R 0 A product as high as 16 Ωcm 2 and detectivity D* (2 µm, 0 V) ~ 10 10 cm Hz 1/2 W -1. A model explaining sulfuration mechanisms with thioacetamide and (NH 4 ) 2 S is proposed.

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“…The high-frequency dielectric constant is also composition-dependent (Reine et al, 1981) and is given by…”

Section: S Distribution Statement (Of This Report)mentioning

confidence: 99%

Theoretical Model of Hg(1-x)Cd(x)Te Photovoltaic and Photoconductive Infrared Detectors.

Fote¹

1985

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Chapter 6 Photovoltaic Infrared Detectors

Cited by 82 publications

References 125 publications

Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band HgCdTe detectors

Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band HgCdTe detectors

Surface passivation of GaInAsSb photodiodes with thioacetamide

Theoretical Model of Hg(1-x)Cd(x)Te Photovoltaic and Photoconductive Infrared Detectors.

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