Characterisation of an RF power splitter for multi-tile PECVD systems application

Michna, T.; Ellingboe, A. R.

doi:10.1016/j.cap.2011.06.021

Cited by 9 publications

(8 citation statements)

References 4 publications

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“…The changes in the spatial distributions of the plasma parameters by using a combination of dielectric components with different dielectric constants to fabricate the component that plays the role of an electrode, such as the showerhead, were previously studied [10][11][12]. However, studies of the effect of using a combination of dielectric parts on the sidewall do not seem to have been reported.…”

Section: Effects Of Optimization Of the Dielectric Sidewallmentioning

confidence: 99%

“…Xia et al proposed a segmented non-uniform dielectric module design for uniformity control [11]. As an alternative, Michna and Ellingboe proposed the use of a multi-tiled system where adjacent tiles are out of phase to ensure good uniformity [12]. Additionally, according to Kim and Lee, a non-uniform temperature distribution of the source gas supplied from the showerhead electrode can result in a non-uniform spatial distribution of the plasma density near the center of the wafer [13].…”

Section: Introductionmentioning

confidence: 99%

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Numerical optimization of dielectric properties to achieve process uniformity in capacitively coupled plasma reactors

Kim,

Lee,

Park

2024

Plasma Sources Sci. Technol.

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This paper presents the results of our numerical analysis to optimize the dielectric properties to achieve process uniformity in the thin film deposition process using capacitively coupled plasma. The difference in the plasma density distribution was analyzed by changing the wafer material from silicon to quartz (or Teflon). Similarly, aluminum was compared with aluminum nitride as the electrode material, and the sidewall material was varied from quartz to a perfect dielectric to study the effect on the plasma characteristics. A two-dimensional self-consistent fluid model was used to analyze the spatial distribution of the plasma parameters. In terms of the process conditions, the gas pressure was set to 400 Pa, the input power was fixed to 100 W, and a radio frequency of 13.56 MHz was used. SiH4/Ar was used as the gas mixture, and these conditions were used as input for numerical simulations of the deposition state of the hydrogenated amorphous silicon layer. The radial spatial distribution of plasma parameters was confirmed to be modified by dielectric elements with low dielectric constants regardless of the type of element. Despite the thin wafer thickness, the use of a wafer with low permittivity weakens the electric field near the electrode edge due to the stronger surface charge effect. Additionally, by changing the material of the sidewall to a perfect dielectric, a more uniform distribution of plasma could be obtained. This is achieved as the peak values of the plasma parameters are located away from the wafer edge. Interestingly, the case in which half of the sidewall was specified as comprising a perfect dielectric and the other half quartz had a more uniform distribution than the case in which the sidewalls consisted entirely of a perfect dielectric.

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Section: Effects Of Optimization Of the Dielectric Sidewallmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Numerical optimization of dielectric properties to achieve process uniformity in capacitively coupled plasma reactors

Kim,

Lee,

Park

2024

Plasma Sources Sci. Technol.

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“…The PSTLD provides fully differential RF power to each of the six pair outputs (12 tile electrode). More detailed discussion of the PSTLD can be found in Michna et al [32]. The multielectrode tiles are power in checkerboard (push-pull) configuration, i.e.…”

Section: Plasma Reactormentioning

confidence: 99%

Investigation of plasma uniformity, rotational and vibrational temperature in a 162 MHz multi-electrode capacitive discharge

Sirse

Harvey

Gaman

et al. 2020

J. Phys. D: Appl. Phys.

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The plasma density (n e ) profile, rotational (T rot ) and vibrational (T vib ) temperatures, and their dependence on the RF power (500-1500 W) and gas pressure (50-500 mTorr) is investigated in a high to very high frequency (VHF) (162 MHz) capacitively coupled nitrogen plasma excited by a multi-tile electrode (tiles) system. The density profile is measured in the mid-plane of the discharge using a resonance hairpin probe, and the rotational and vibrational temperatures are measured at both tile centre and tile-tile boundary using optical emission spectroscopy. It is observed that the plasma density increases monotonically with a rise in RF power and decreases with an increase in the operating gas pressure. At a low gas pressure (50 mTorr), plasma density profile shows a maximum at the tile centre and a minimum at the tile-tile boundary, whereas, at high gas pressure tile-edge effects are observed. Measured rotational temperature (∼350-450 K) is slightly above room temperature for both positions and independent of RF power and operating gas pressure. Vibrational temperature is in the range of ∼6500-9400 K, and increases with RF power, analogue to the plasma density. It is noticed that the plasma uniformity can be substantially improved, to better than 90%, by changing the power-pressure matrix. A large difference between measured vibrational and rotational gas temperature suggests that the plasma produced by VHF multi-tile electrode is under highly non-equilibrium condition and thus highly efficient to produce unique gas phase chemistry.

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“…In recent years, Wang and his group developed a software platform for Multi-physics Analysis of Plasma Sources (MAPS), which contains three models, i.e., the fluid model, [4][5][6][9][10][11] the Particle-In-Cell/Monte Carlo (PIC/MC) model [8,[12][13][14][15] and the global model. [16] The MAPS can be used to investigate the plasma behaviors in CCP and inductively coupled plasma (ICP) discharges.…”

Section: Plasma Equationsmentioning

confidence: 99%

“…[7] Moreover, in Michna's work, multi-tile systems with neighboring tiles out of phase was proposed for obtaining good deposition uniformity in plasma enhanced chemical vapor deposition (PECVD) processes. [8] In the presence of dielectrics, the ions and electrons are accumulated on the dielectric surface, which is the so-called "surface-charging effect". The property (i.e., relative permittivity) and the geometrical size (i.e., thickness and length) of the dielectric affect the accumulated charge density, and therefore influence the potential on the dielectric surface.…”

Section: Introductionmentioning

confidence: 99%

Influence of dielectric materials on uniformity of large-area capacitively coupled plasmas for N ₂ /Ar discharges

Liang¹,

Zhang²,

Wang³

2016

Chinese Phys. B

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The effect of the dielectric ring on the plasma radial uniformity is numerically investigated in the practical 450-mm capacitively coupled plasma reactor by a two-dimensional self-consistent fluid model. The simulations were performed for N 2 /Ar discharges at the pressure of 300 Pa, and the frequency of 13.56 MHz. In the practical plasma treatment process, the wafer is always surrounded by a dielectric ring, which is less studied. In this paper, the plasma characteristics are systematically investigated by changing the properties of the dielectric ring, i.e., the relative permittivity, the thickness and the length. The results indicate that the plasma parameters strongly depend on the properties of the dielectric ring. As the ratio of the thickness to the relative permittivity of the dielectric ring increases, the electric field at the wafer edge becomes weaker due to the stronger surface charging effect. This gives rise to the lower N + 2 ion density, flux and N atom density at the wafer edge. Thus the homogeneous plasma density is obtained by selecting optimal dielectric ring relative permittivity and thickness. In addition, we also find that the length of the dielectric ring should be as short as possible to avoid the discontinuity of the dielectric materials, and thus obtain the large area uniform plasma.

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Characterisation of an RF power splitter for multi-tile PECVD systems application

Cited by 9 publications

References 4 publications

Numerical optimization of dielectric properties to achieve process uniformity in capacitively coupled plasma reactors

Numerical optimization of dielectric properties to achieve process uniformity in capacitively coupled plasma reactors

Investigation of plasma uniformity, rotational and vibrational temperature in a 162 MHz multi-electrode capacitive discharge

Influence of dielectric materials on uniformity of large-area capacitively coupled plasmas for N ₂ /Ar discharges

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Characterisation of an RF power splitter for multi-tile PECVD systems application

Cited by 9 publications

References 4 publications

Numerical optimization of dielectric properties to achieve process uniformity in capacitively coupled plasma reactors

Numerical optimization of dielectric properties to achieve process uniformity in capacitively coupled plasma reactors

Investigation of plasma uniformity, rotational and vibrational temperature in a 162 MHz multi-electrode capacitive discharge

Influence of dielectric materials on uniformity of large-area capacitively coupled plasmas for N 2 /Ar discharges

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Influence of dielectric materials on uniformity of large-area capacitively coupled plasmas for N ₂ /Ar discharges