Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

doi:10.1117/12.2244596

Cited by 1 publication

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“…This work is an extension on a previous conference publication by the same authors. 23 For I-V measurements where reverse biasing is applied to base-emitter and base-collector shorted HBTs, the results show that little deviation occurs as the device is cooled down to 77 K. This work can be used to estimate the DR and sensitivity of diode-connected SiGe HBTs. 8 Sensitivity is directly proportional to the current flow.…”

Section: Discussionmentioning

confidence: 91%

Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications

2018

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The characterization of SiGe diode-connected heterojunction bipolar transistors (HBTs) through measurements of two-circuit configurations is presented. Characterization is done to understand the behavior of these diodes for near-infrared detecting applications at room temperature and 77 K. The two configurations that are considered differ; the first is a base-emitter shorted HBT and the second is a base-collector shorted HBT. The parameters measured are current density-voltage, capacitance-voltage, and noise. The two configurations are implemented using the austriamicrosystems AG 0.35-μm process. The base-emitter shorted configuration exhibits a flatter J C versus V curve when in reverse bias compared with the base-collector configuration. The C − V curves are the same for both configurations. The noise voltage of the base-emitter configuration is 36 and 14.48 μV∕ ffiffiffiffiffiffi Hz p at 102.5 Hz for 293 and 77 K temperature points, respectively, to 14.48 and 12.42 μV∕ ffiffiffiffiffiffi Hz p at 50 kHz for 293 and 77 K, respectively. The noise voltage for the base-collector configuration is 12.6 and 7.56 μV∕ ffiffiffiffiffiffi Hz p at 102.5 Hz for 293 and 77 K, respectively, to 2.228 and 5.981 μV∕ ffiffiffiffiffiffi Hz pat 50 kHz for 293 and 77 K, respectively. This work is done using a standard Si-based technology, where a detector array with readout circuitry can be prototyped as a single chip. The floating base transistor topology is analyzed and used as a foundation for this work. The characteristics of a floating base configuration result in a wide depletion region, large-series resistance, and small-series capacitance. When shorting the base with the emitter and collector, respectively, compared with a floating base configuration, a smaller depletion region, reduced series resistance, and larger series capacitance are observed.

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Section: Discussionmentioning

confidence: 91%