Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies

Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing

“…The P 2 peak at 400.7 eV is associated with the N 1s to π * transition in the N-N species [19], which is a signature of molecular nitrogen. The energy and width of this resonance peak are very similar to the vibration structure of trapped N 2 previously observed in oxides and nitrides, such as ZnO [17], GaN [20] and InN [21], implanted with N ions. As a fingerprint technique for the bonding arrangement of a dopant in the lattice, the subtle variation of the P 2 parameters among the compounds confirms that this N 2 species interacts weakly with the surrounding matrix.…”

Chemical nature of N‐ions incorporated into epitaxial ZnO films

“…A confirmation for our assignment (emission A at 404 eV as molecular nitrogen) can be found in the work of Hecht et al 12,where GaAs, InAs and InSb were irradiated by ${\rm N}_{2}^{ + } $ , and Bozanic et al 22 where GaN, GaSb, GaAs, InN and InSb were irradiated by low energy ${\rm N}_{2}^{ + } $ . The observed NEXAFS resonance was correlated with the photoemission at around 404 eV (very similar to our data).…”

“…On the other hand, the assignment of the photoemission was still controversial: Perkins et al assigned the high binding energy emission (labelled A in this work) to the molecular nitrogen, whereas Petravic correlated the photoemission at 399.5 eV (labelled B in this work) with N 2 . Photoemission signals and NEXAFS resonances were correlated already in former investigations on ${\rm N}_{2}^{ + } $ irradiated GaAs, InAs and InSb by Hecht et al 12 and the whole range of III–V compounds by Bozanic et al 22. There, the photoemission around 404 eV was attributed to the N 2 .…”

Single-crystalline Bi5O7NO3 nanofibers: Hydrothermal synthesis, characterization, growth mechanism, and photocatalytic properties

“…7b contains peaks at 394.1 eV and 399.2 eV, and the low peak intensity arose due to the low content (2.65 at.%) of nitrogen in Bi 5 O 7 NO 3 . The peak at 394.1 eV was ascribed to the presence of Bi-N bonds [31][32][33][34][35][36]. The peak at 399.2 eV arose due to the special layered structure [31][32][33]37] and was ascribed to N-O bonds on the nanofiber surface.…”