Characterisation of nanocavities in He+-implanted silicon by transmission electron microscopy and small-angle X-ray scattering

Dumont, M.; Coulet, Marie‐Vanessa; Bley, F.; Regula, G.

doi:10.1016/j.mseb.2009.03.019

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“…[18]. It is noteworthy that f v is the volume of nanocavities per investigated unit volume, including non-implanted silicon.…”

Section: Saxs Resultsmentioning

confidence: 99%

Characterization of Nanocavities in Silicon Using Small Angle X-Ray Scattering

Dunmont¹,

Coulet

Regula

et al. 2007

MRS Proc.

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The techniques of small angle X-ray scattering and transmission electron microscopy are applied to characterize the size distribution of nanocavities in a (111) Si wafer multi-implanted with He + in the MeV range energy. The comparison between both methods shows that they all give access to the same structural information but small angle X-ray scattering additionally offers the possibility to monitor the cavity size distribution during a thermal treatment. Moreover, providing that the collected data are of good quality, the former method also allows the knowledge of the porosity of the implanted Si wafer.

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“…[18]. It is noteworthy that f v is the volume of nanocavities per investigated unit volume, including non-implanted silicon.…”

Section: Saxs Resultsmentioning

confidence: 99%