2015
DOI: 10.1016/j.jallcom.2015.09.007
|View full text |Cite
|
Sign up to set email alerts
|

Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

1
1
0

Year Published

2016
2016
2024
2024

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 12 publications
(2 citation statements)
references
References 15 publications
1
1
0
Order By: Relevance
“…The trapped electrons acted as virtual gate and depleted electrons in the channel, as shown in figure 6(a). The same trend has been found in AlGaN/GaN HEMTs [11,12]. Thus, 2DEG in the channel decreased and led to the current collapse effect.…”
Section: Discussionsupporting
confidence: 78%
“…The trapped electrons acted as virtual gate and depleted electrons in the channel, as shown in figure 6(a). The same trend has been found in AlGaN/GaN HEMTs [11,12]. Thus, 2DEG in the channel decreased and led to the current collapse effect.…”
Section: Discussionsupporting
confidence: 78%
“…23 The transient change of capacitance ∆C is calculated from a time window of 15ms. Before applied step-stress, the value of ∆C is 0.92×10 -11 F. After applied step-stress, ∆C increases to 1.12×10 -11 F due to the step-stress induced extra traps.…”
Section: Resultsmentioning
confidence: 99%