Characterisation of thin film silicon films deposited by plasma enhanced chemical vapour deposition at 162MHz, using a large area, scalable, multi-tile-electrode plasma source

Monaghan, Eamonn; Michna, T.; Gaman, Cezar; O'Farrel, D.; Ryan, Kevin; Adley, David; Perova, Tatiana S.; Drews, B.; Jaskot, Matthew B.; Ellingboe, A. R.

doi:10.1016/j.tsf.2011.04.092

Cited by 27 publications

(15 citation statements)

References 6 publications

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“…Where the κ is regulation rate, {∆ε r, j } is the compensated sequence to the design variable sequence; and {s j } is the distributed sequence of {F CP,i }, the same as formula (17), and hence S = V −1Ũ F CP . Relative error (or non-uniformity) of the electron density profiles F C P (r ) on the probe line approximating to the expected profile F E P (r ) during the iterations.…”

Section: Profile Error Feedback (Pef) Methods Modelmentioning

confidence: 99%

“…The first one is to do the multi-DOF design for the energy source. For instance, the solution that partitions the electrode into multi independently controllable sub-electrodes can achieve refined and flexible uniformity control of the plasma profile in the entire critical domain via regulating the power and phase of each sub-electrode, such as the multi-tile electrodes, [16][17][18] segmented electrodes, 19 and multi electrodes. 20 The other is to design the structure or material property of the medium in which the energy transfers.…”

Section: Introductionmentioning

confidence: 99%

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The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber

et al. 2014

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Low-temperature plasma technique is one of the critical techniques in IC manufacturing process, such as etching and thin-film deposition, and the uniformity greatly impacts the process quality, so the design for the plasma uniformity control is very important but difficult. It is hard to finely and flexibly regulate the spatial distribution of the plasma in the chamber via controlling the discharge parameters or modifying the structure in zero-dimensional space, and it just can adjust the overall level of the process factors. In the view of this problem, a segmented non-uniform dielectric module design solution is proposed for the regulation of the plasma profile in a CCP chamber. The solution achieves refined and flexible regulation of the plasma profile in the radial direction via configuring the relative permittivity and the width of each segment. In order to solve this design problem, a novel simulation-based auto-design approach is proposed, which can automatically design the positional sequence with multi independent variables to make the output target profile in the parameterized simulation model approximate the one that users preset. This approach employs an idea of quasi-closed-loop control system, and works in an iterative mode. It starts from initial values of the design variable sequences, and predicts better sequences via the feedback of the profile error between the output target profile and the expected one. It never stops until the profile error is narrowed in the preset tolerance.

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Section: Profile Error Feedback (Pef) Methods Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber

et al. 2014

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“…14,15 To suppress this problem, VHF CCP discharges excited by segmented electrode are proposed and researched. [16][17][18][19] On the other hand, ICP discharges can overcome these limitations to some extent, i.e., the higher plasma density (up to 10 11 -10 12 cm À3 ) is maintained at a very low pressure (<10 mTorr), and fully independent control of the ion bombardment energy is possible using a separate bias onto the substrate. 20 However, controllability of plasma uniformity over a large area remains the major challenge.…”

Section: Introductionmentioning

confidence: 99%

Electron density modulation in a pulsed dual-frequency (2/13.56 MHz) dual-antenna inductively coupled plasma discharge

Sirse

Mishra

Yeom

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The electron density, n e , modulation is measured experimentally using a resonance hairpin probe in a pulsed, dual-frequency (2/13.56 MHz), dual-antenna, inductively coupled plasma discharge produced in argon-C 4 F 8 (90-10) gas mixtures. The 2 MHz power is pulsed at a frequency of 1 kHz, whereas 13.56 MHz power is applied in continuous wave mode. The discharge is operated at a range of conditions covering 3-50 mTorr, 100-600 W 13.56 MHz power level, 300-600 W 2 MHz peak power level, and duty ratio of 10%-90%. The experimental results reveal that the quasisteady state n e is greatly affected by the 2 MHz power levels and slightly affected by 13.56 MHz power levels. It is observed that the electron density increases by a factor of 2-2.5 on increasing 2 MHz power level from 300 to 600 W, whereas n e increases by only $20% for 13.56 MHz power levels of 100-600 W. The rise time and decay time constant of n e monotonically decrease with an increase in either 2 or 13.56 MHz power level. This effect is stronger at low values of 2 MHz power level. For all the operating conditions, it is observed that the n e overshoots at the beginning of the onphase before relaxing to a quasisteady state value. The relative overshoot density (in percent) depends on 2 and 13.56 MHz power levels. On increasing gas pressure, the n e at first increases, reaching to a maximum value, and then decreases with a further increase in gas pressure. The decay time constant of n e increases monotonically with pressure, increasing rapidly up to 10 mTorr gas pressure and at a slower rate of rise to 50 mTorr. At a fixed 2/13.56 MHz power level and 10 mTorr gas pressure, the quasisteady state n e shows maximum for 30%-40% duty ratio and decreases with a further increase in duty ratio.

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“…One is to partition the energy source. For instance, the solution that the electrode is partitioned into multi independently controllable sub-electrodes can be refined and flexible regulate the uniformity of plasma profile with proper configuration of the power and phase of each sub-electrode, such as the multi-tile electrodes, [18][19][20] segmented electrodes, 21 and multi electrodes. 22 The other is to design the structure or material property of the media in which the energy transfers.…”

Section: Introductionmentioning

confidence: 99%

New simulation-based approach for the profile control in a process chamber: Fluid, thermal, and plasma profile

Xiang

Xia

Wang

et al. 2015

Proceedings of the Institution of Mechanical Engineers, Part E:

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Process chamber is the core unit of chemical vapor deposition and etching, and the physical fields in it have fatal effect on process quality. It is significant and difficult for improving the process performance to regulate the fields' profiles finely. Two design solutions for the profile regulation are proposed: controllable type and resistance type. A novel profile error feedback method is presented, and a simulation-based auto-design framework is established. The profile error feedback method is in a quasi-closed-loop-control mode. It starts from an initial guessed sequence of the design/control variables and predicts a better sequence via feedback of the profile error between the output-targeted profile and the expected one. It never stops until the profile error is narrowed in the preset tolerance. Three kinds of numerical experiments about the regulation of the thermal, fluid, and plasma profile are set to test the effectiveness and feasibility of the profile error feedback method and the two kinds of design schemes.

show abstract

Characterisation of thin film silicon films deposited by plasma enhanced chemical vapour deposition at 162MHz, using a large area, scalable, multi-tile-electrode plasma source

Cited by 27 publications

References 6 publications

The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber

The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber

Electron density modulation in a pulsed dual-frequency (2/13.56 MHz) dual-antenna inductively coupled plasma discharge

New simulation-based approach for the profile control in a process chamber: Fluid, thermal, and plasma profile

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