2007
DOI: 10.1016/j.tsf.2006.12.126
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Characteristic curves of hydrogenated amorphous silicon based solar cells modeled with the defect pool model

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Cited by 21 publications
(20 citation statements)
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“…3,15,21 As a consequence, the recombination rate is expected to exhibit a peak close to the p/i interface, which is confirmed by our simulations. Kroon and Van Table I (using E l ¼ 1.69 eV).…”
Section: Discussionsupporting
confidence: 85%
“…3,15,21 As a consequence, the recombination rate is expected to exhibit a peak close to the p/i interface, which is confirmed by our simulations. Kroon and Van Table I (using E l ¼ 1.69 eV).…”
Section: Discussionsupporting
confidence: 85%
“…In these devices the corresponding condition to have a high forward current limited by SCLC and not by hole injection is that the sum of the p-c-Si: H activation energy and the valence band offset at the p / i interface should not be much higher than 0.35 eV. 20 This condition is usually fulfilled. 28 High band-gap layers present at the p / i interface could also hinder the maximum high forward current that can be achieved with these structures.…”
Section: A A-si: H Single-junction P-i-n Structuresmentioning
confidence: 99%
“…They refer to some additional physics integrated in order to improve the characterization and design of single and multiple solar cells of amorphous, microcrystalline, and crystalline silicon. For instance we can mention the inclusion of amphoteric states, 17 the Pool-Frenkel model, 18 the defect pool model, 19,20 direct tunneling at constant energy, 21 recombination tunnelling, 18 gap and doping continuous grading, light scattering at rough surfaces, light interference, 22 etc. The density of states ͑DOS͒ in a-Si: H and in c-Si: H is described by two exponential tails and by three Gaussian distributions recognized with the symbols D − , D o , and D + .…”
Section: Introductionmentioning
confidence: 99%
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