Characteristics and limitation of scaled-down MOSFET's due to two-dimensional field effect

Masuda, H.; Nakai, M.; Kubo, M.

doi:10.1109/t-ed.1979.19529

Cited by 83 publications

(7 citation statements)

References 5 publications

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“…The semiconductor industry has developed rapidly, and electronic devices have been scaled down. However, scaled-down devices can show many problems, such as direct tunneling, high gate leakage current and poor reliability [1,2]. Therefore, HfO 2 has been studied to replace conventional SiO 2 as a high-κ material because of its advantages, such as high density, good ductility and corrosion resistance, as well as its high-k [3,4].…”

Section: Introductionmentioning

confidence: 99%

Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

et al. 2020

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HfO2 was deposited at 80–250 °C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth per cycle (GPC) is constant, shifted from high temperatures (150–200 °C) to lower temperatures (80–150 °C) in PEALD. HfO2 deposited at 80 °C by PEALD showed higher density (8.1 g/cm3) than those deposited by thermal ALD (5.3 g/cm3) and a smooth surface (RMS Roughness: 0.2 nm). HfO2 deposited at a low temperature by PEALD showed decreased contaminants compared to thermal ALD deposited HfO2. Values of refractive indices and optical band gap of HfO2 deposited at 80 °C by PEALD (1.9, 5.6 eV) were higher than those obtained by using thermal ALD (1.7, 5.1 eV). Transparency of HfO2 deposited at 80 °C by PEALD on polyethylene terephthalate (PET) was high (> 84%). PET deposited above 80 °C was unable to withstand heat and showed deformation. HfO2 deposited at 80 °C by PEALD showed decreased leakage current from 1.4 × 10−2 to 2.5 × 10−5 A/cm2 and increased capacitance of approximately 21% compared to HfO2 using thermal ALD. Consequently, HfO2 deposited at a low temperature by PEALD showed improved properties compared to HfO2 deposited by thermal ALD.

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Section: Introductionmentioning

confidence: 99%

Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

et al. 2020

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“…is included in the Vm exprel!:sion. The constant of this term is inversely proportional to the oxide capaci~ tance and the cube of the channel length [19]. The parameter ETA is introduced to allow more flexibility.…”

mentioning

confidence: 99%

The Simulation of MOS Integrated Circuits Using SPICE2

Vladimirescu¹,

Liu²

1980

262

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“…However, to serve as a demonstration, the sophisticated SPICE 2G level-3 MOSFET model (Vladimirescu and Liu 1980) is adopted. Some important equations of the adopted MOSFET model are listed below for convenience (Masuda et al 1979, Troutman 1979, Dang 1979: (2) (W P is the depletion layer width of a plane juction), FN is the correction factor of narrow channel effect, and 1tXĨ n linear region: (Merckel et al (1972))…”

Section: Parameter Extractionmentioning

confidence: 99%